Microchip Technology, Inc. Single IGBTs APT20GF120BRG

Description
IGBT NPT 1200V 32A 200W Through Hole TO-247 [B]
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Description
IGBT NPT 1200V 32A 200W Through Hole TO-247 [B]
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Datasheet
Datasheet Summary
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The APT20GF120BR is a 1200V, 32A non-punch-through IGBT in a TO-247 package, designed for high-frequency switching up to 20 kHz. It has a continuous collector current of 32 A at 25°C and 20 A at 90°C, with a pulsed collector current rating of 64 A. The device is rated for a maximum power dissipation of 200 W, with a junction-to-case thermal resistance of 0.63°C/W and a maximum junction temperature of 150°C. It features an avalanche energy rating of 22 mJ and is RBSOA and SCSOA rated. The TO-247 package has a mounting torque specification of 1.1 Nm. The part includes gate-emitter voltage protection up to ±20 V and low gate-emitter leakage current of ±100 nA.

Datasheet Summary
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The APT20GF120BR is a 1200V, 32A non-punch-through IGBT in a TO-247 package, designed for high-frequency switching up to 20 kHz. It has a continuous collector current of 32 A at 25°C and 20 A at 90°C, with a pulsed collector current rating of 64 A. The device is rated for a maximum power dissipation of 200 W, with a junction-to-case thermal resistance of 0.63°C/W and a maximum junction temperature of 150°C. It features an avalanche energy rating of 22 mJ and is RBSOA and SCSOA rated. The TO-247 package has a mounting torque specification of 1.1 Nm. The part includes gate-emitter voltage protection up to ±20 V and low gate-emitter leakage current of ±100 nA.

Suppliers

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Product
Description
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Single IGBTs - 150-APT20GF120BRG-ND - DigiKey
Thief River Falls, MN, United States
IGBT NPT 1200V 32A 200W Through Hole TO-247 [B]

IGBT NPT 1200V 32A 200W Through Hole TO-247 [B]

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Technical Specifications

  DigiKey
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 150-APT20GF120BRG-ND
Product Name Single IGBTs
TJ -55 to 150 C (-67 to 302 F)
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