Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247AB Rail Product overview: FGH30N120FTDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.2KV, 60A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1.2KV, 60A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH30N120FTDTU can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 1200V 60A 339W Through Hole TO-247-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204176-FGH30N120FTDT
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 730ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 208nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 339W
Pulsed Collector Current: 90A
Collector-emitter saturation voltage(Max): 2V @ 15V, 30A
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
IGBT 1200V 60A 339W TO247
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-FGH30N120FTDTU | FGH30N120FTDTU-ND | 204176-FGH30N120FTDTU | FGH30N120FTDTU |
| Product Name | 1.2KV 60A IGBT Transistor | Single IGBTs | IGBTs - Single - FGH30N120FTDTU | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 339000 milliwatts | 339000 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247 |
