IGBT NPT 1200V 64A 357W Through Hole
IGBT 1200V 64A 357W TMAX Product overview: APT33GF120B2RDQ2G from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 64A, 357W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 64A, 357W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT33GF120B2RDQ2
IGBT 1200V 64A 357W TMAX
| DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT33GF120B2RDQ2G-ND | 279-APT33GF120B2RDQ2G | APT33GF120B2RDQ2G |
| Product Name | Single IGBTs | 1200V 64A 357W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
