onsemi Single IGBTs FGAF40N60UFDTU

Description
IGBT 600V 40A 100W Through Hole TO-3PF
Request a Quote Datasheet
Description
IGBT 600V 40A 100W Through Hole TO-3PF
Request a Quote Datasheet

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Single IGBTs - FGAF40N60UFDTU-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGAF40N60UFDTU-ND
Single IGBTs FGAF40N60UFDTU-ND
IGBT 600V 40A 100W Through Hole TO-3PF

IGBT 600V 40A 100W Through Hole TO-3PF

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IGBTs - Single - FGAF40N60UFDTU - 1038645-FGAF40N60UFDTU - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGAF40N60UFDTU
1038645-FGAF40N60UFDTU
IGBTs - Single - FGAF40N60UFDTU 1038645-FGAF40N60UFDTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038645-FGAF40N60UFD TU Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 95ns Input Type: Standard Gate Charge: 77nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PF Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 100W Pulsed Collector Current: 160A Collector-emitter saturation voltage(Max): 3V @ 15V, 20A Total Switching Energy(Ets): 470μJ (on), 130μJ (off) Turn-on and Turn-off delay time: 15ns/65ns Testing Conditions: 300V, 20A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Quantity per package: 360

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038645-FGAF40N60UFDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 95ns
Input Type: Standard
Gate Charge: 77nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PF
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 100W
Pulsed Collector Current: 160A
Collector-emitter saturation voltage(Max): 3V @ 15V, 20A
Total Switching Energy(Ets): 470μJ (on), 130μJ (off)
Turn-on and Turn-off delay time: 15ns/65ns
Testing Conditions: 300V, 20A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Quantity per package: 360

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Sheung Wan, Hong Kong
IGBT Transistors
FGAF40N60UFDTU
IGBT Transistors FGAF40N60UFDTU
IGBT Transistors Ultrafast

IGBT Transistors Ultrafast

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Discrete Semiconductor Products - Transistors - IGBTs - FGAF40N60UFDTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGAF40N60UFDTU
Discrete Semiconductor Products - Transistors - IGBTs FGAF40N60UFDTU
IGBT 600V 40A TO3PF

IGBT 600V 40A TO3PF

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGAF40N60UFDTU-ND 1038645-FGAF40N60UFDTU FGAF40N60UFDTU FGAF40N60UFDTU
Product Name Single IGBTs IGBTs - Single - FGAF40N60UFDTU IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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