Manufacturer: ON Semiconductor
Win Source Part Number: 753232-FGH20N60SFDTU
Packaging: Tube
Mounting Style: Through Hole
Reverse Recovery Time (trr): 34ns
IGBT Type: Field Stop
Current - Collector Pulsed (Icm): 60A
Switching Energy: 370μJ (on), 160μJ (off)
Input Type: Standard
Gate Charge: 65nC
Test Condition: 400V, 20A, 10Ohm, 15V
Family Name: FGH20N60SFD
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 40A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Alternative Parts (Cross-Reference): IGW20N60H3; IGW20N60H3XK; IXGH20N60;
Introduction Date: September 18, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2023
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 450
MSL Level: 1 (Unlimited)
Maximum Power: 165W
Vce(on) (Maximum) at Vge, Ic: 2.8V at 15V, 20A
Td (on/off) at 25°C: 13ns/90ns
IGBT Field Stop 600V 40A 165W Through Hole TO-247-3
IGBT FIELD STOP 600V 40A TO247-3
IGBT,N CHANNEL,FAST,W/DIO,6
IGBT Transistors 600V 20A Field Stop
IGBT FIELD STOP 600V 40A TO247-3
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 753232-FGH20N60SFDTU | FGH20N60SFDTU-ND | FGH20N60SFDTU | 41T0508 | FGH20N60SFDTU | FGH20N60SFDTU |
| Product Name | IGBTs - Single - FGH20N60SFDTU | Single IGBTs | Single IGBTs | Igbt,n Channel,fast,w/dio,600V,40A,to247; Continuous Collector Current Onsemi | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| VCES | 600 volts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) | ||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3 | ||
| Packing Method | Tube; Tube | Tube | Tube; Tube |
