onsemi Single IGBTs FGH50N6S2D

IGBT 600V 75A 463W Through Hole TO-247-3

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038675-FGH50N6S2D
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 55ns
Input Type: Standard
Gate Charge: 70nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 463W
Pulsed Collector Current: 240A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 30A
Total Switching Energy(Ets): 260μJ (on), 250μJ (off)
Turn-on and Turn-off delay time: 13ns/55ns
Testing Conditions: 390V, 30A, 3 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 450

600V, SMPS II IGBT, 450-TUBE Product overview: FGH50N6S2D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH50N6S2D can be used for catalog matching and distributor lookup.