onsemi Single IGBTs FGH50N6S2D

Description
IGBT 600V 75A 463W Through Hole TO-247-3
Request a Quote Datasheet
Description
IGBT 600V 75A 463W Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - FGH50N6S2D-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGH50N6S2D-ND
Single IGBTs FGH50N6S2D-ND
IGBT 600V 75A 463W Through Hole TO-247-3

IGBT 600V 75A 463W Through Hole TO-247-3

Buy Now Datasheet
Singapore
600V IGBT Transistor
279-FGH50N6S2D
600V IGBT Transistor 279-FGH50N6S2D
600V, SMPS II IGBT, 450-TUBE Product overview: FGH50N6S2D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH50N6S2D can be used for catalog matching and distributor lookup.

600V, SMPS II IGBT, 450-TUBE Product overview: FGH50N6S2D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH50N6S2D can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - FGH50N6S2D - 1038675-FGH50N6S2D - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGH50N6S2D
1038675-FGH50N6S2D
IGBTs - Single - FGH50N6S2D 1038675-FGH50N6S2D
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038675-FGH50N6S2D Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 55ns Input Type: Standard Gate Charge: 70nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 463W Pulsed Collector Current: 240A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 30A Total Switching Energy(Ets): 260μJ (on), 250μJ (off) Turn-on and Turn-off delay time: 13ns/55ns Testing Conditions: 390V, 30A, 3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038675-FGH50N6S2D
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 55ns
Input Type: Standard
Gate Charge: 70nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 463W
Pulsed Collector Current: 240A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 30A
Total Switching Energy(Ets): 260μJ (on), 250μJ (off)
Turn-on and Turn-off delay time: 13ns/55ns
Testing Conditions: 390V, 30A, 3 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGH50N6S2D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGH50N6S2D
Discrete Semiconductor Products - Transistors - IGBTs FGH50N6S2D
IGBT 600V 75A TO247-3

IGBT 600V 75A TO247-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGH50N6S2D-ND 279-FGH50N6S2D 1038675-FGH50N6S2D FGH50N6S2D
Product Name Single IGBTs 600V IGBT Transistor IGBTs - Single - FGH50N6S2D Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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