The IGBT AFGHL40T65SQ is a 650V, 80A device designed for high-performance applications, particularly in automotive systems such as HEV-EV onboard chargers and DC-DC converters. It features a maximum power dissipation of 239W and is AEC-Q101 qualified, ensuring reliability in automotive environments. The device has a low saturation voltage of 1.6V at 40A, a maximum junction temperature of 175¬8C, and a positive temperature coefficient for easy parallel operation. It is RoHS compliant and offers fast switching capabilities, making it suitable for both hard and soft switching topologies. The IGBT is housed in a TO-247 package, facilitating efficient thermal management with a thermal resistance of 0.63¬8C/W from junction to case.
IGBT Trench Field Stop 650V 80A 239W Through Hole TO-247-3
AEC 101 QUALIFIED, 650V, 40A FIE
IGBT, 650V, 80A, 239W, TO-247 ROHS COMPLIANT: YES
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 488-AFGHL40T65SQ-ND | AFGHL40T65SQ | 74AH4030 |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, 650V, 80A, 239W, To-247 Rohs Compliant Onsemi |
| TJ | -55 to 175 C (-67 to 347 F) |
