IGBT Trench Field Stop 1200V 50A 313W Through Hole TO-247-3
IGBT, 1200V, 25A, Field Stop Trench, 450-TUBE Product overview: FGH25N120FTDS from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 25A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 25A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH25N120FTDS can be used for catalog matching and distributor lookup.
IGBT 1200V 50A 313W TO247
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204174-FGH25N120FTDS
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 535ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 169nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 313W
Pulsed Collector Current: 75A
Collector-emitter saturation voltage(Max): 2V @ 15V, 25A
Total Switching Energy(Ets): 1.42mJ (on), 1.16mJ (off)
Turn-on and Turn-off delay time: 26ns/151ns
Testing Conditions: 600V, 25A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
IGBT Transistors 1200V 25A Field Stop Trench IGBT
IGBT 1200V 50A 313W TO247
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 488-FGH25N120FTDS-ND | 279-FGH25N120FTDS | FGH25N120FTDS | 204174-FGH25N120FTDS | FGH25N120FTDS | FGH25N120FTDS |
| Product Name | Single IGBTs | 1200V 25A IGBT Transistor | Single IGBTs | IGBTs - Single - FGH25N120FTDS | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3; TO-247 | |||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube |
