onsemi Single IGBTs FGH25N120FTDS

Description
IGBT Trench Field Stop 1200V 50A 313W Through Hole TO-247-3
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Description
IGBT Trench Field Stop 1200V 50A 313W Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 488-FGH25N120FTDS-ND - DigiKey
Thief River Falls, MN, United States
IGBT Trench Field Stop 1200V 50A 313W Through Hole TO-247-3

IGBT Trench Field Stop 1200V 50A 313W Through Hole TO-247-3

Buy Now Datasheet
Singapore
1200V 25A IGBT Transistor
279-FGH25N120FTDS
1200V 25A IGBT Transistor 279-FGH25N120FTDS
IGBT, 1200V, 25A, Field Stop Trench, 450-TUBE Product overview: FGH25N120FTDS from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 25A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 25A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH25N120FTDS can be used for catalog matching and distributor lookup.

IGBT, 1200V, 25A, Field Stop Trench, 450-TUBE Product overview: FGH25N120FTDS from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 25A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 25A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH25N120FTDS can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - FGH25N120FTDS - 204174-FGH25N120FTDS - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGH25N120FTDS
204174-FGH25N120FTDS
IGBTs - Single - FGH25N120FTDS 204174-FGH25N120FTDS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204174-FGH25N120FTDS Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 535ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 169nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Maximum Current Collector: 50A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 313W Pulsed Collector Current: 75A Collector-emitter saturation voltage(Max): 2V @ 15V, 25A Total Switching Energy(Ets): 1.42mJ (on), 1.16mJ (off) Turn-on and Turn-off delay time: 26ns/151ns Testing Conditions: 600V, 25A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204174-FGH25N120FTDS
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 535ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 169nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 313W
Pulsed Collector Current: 75A
Collector-emitter saturation voltage(Max): 2V @ 15V, 25A
Total Switching Energy(Ets): 1.42mJ (on), 1.16mJ (off)
Turn-on and Turn-off delay time: 26ns/151ns
Testing Conditions: 600V, 25A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single IGBTs - FGH25N120FTDS - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
FGH25N120FTDS
Single IGBTs FGH25N120FTDS
IGBT 1200V 50A 313W TO247

IGBT 1200V 50A 313W TO247

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGH25N120FTDS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGH25N120FTDS
Discrete Semiconductor Products - Transistors - IGBTs FGH25N120FTDS
IGBT 1200V 50A 313W TO247

IGBT 1200V 50A 313W TO247

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
FGH25N120FTDS
IGBT Transistors FGH25N120FTDS
IGBT Transistors 1200V 25A Field Stop Trench IGBT

IGBT Transistors 1200V 25A Field Stop Trench IGBT

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 488-FGH25N120FTDS-ND 279-FGH25N120FTDS 204174-FGH25N120FTDS FGH25N120FTDS FGH25N120FTDS FGH25N120FTDS
Product Name Single IGBTs 1200V 25A IGBT Transistor IGBTs - Single - FGH25N120FTDS Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247 TO-247; TO-247-3
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube
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