onsemi IGBTs - Single - FGA30N120FTDTU FGA30N120FTDTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038636-FGA30N120FTD TU Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 730ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 208nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 339W Pulsed Collector Current: 90A Collector-emitter saturation voltage(Max): 2V @ 15V, 30A Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient Quantity per package: 450
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038636-FGA30N120FTD TU Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 730ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 208nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 339W Pulsed Collector Current: 90A Collector-emitter saturation voltage(Max): 2V @ 15V, 30A Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - FGA30N120FTDTU - 1038636-FGA30N120FTDTU - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGA30N120FTDTU
1038636-FGA30N120FTDTU
IGBTs - Single - FGA30N120FTDTU 1038636-FGA30N120FTDTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038636-FGA30N120FTD TU Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 730ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 208nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 339W Pulsed Collector Current: 90A Collector-emitter saturation voltage(Max): 2V @ 15V, 30A Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038636-FGA30N120FTDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 730ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 208nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 339W
Pulsed Collector Current: 90A
Collector-emitter saturation voltage(Max): 2V @ 15V, 30A
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
Quantity per package: 450

Buy Now Datasheet
Single IGBTs - FGA30N120FTDTU - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
FGA30N120FTDTU
Single IGBTs FGA30N120FTDTU
IGBT 1200V 60A 339W TO3P

IGBT 1200V 60A 339W TO3P

Supplier's Site Datasheet
Single IGBTs - FGA30N120FTDTU-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGA30N120FTDTU-ND
Single IGBTs FGA30N120FTDTU-ND
IGBT Trench Field Stop 1200V 60A 339W Through Hole TO-3PN

IGBT Trench Field Stop 1200V 60A 339W Through Hole TO-3PN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGA30N120FTDTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGA30N120FTDTU
Discrete Semiconductor Products - Transistors - IGBTs FGA30N120FTDTU
IGBT 1200V 60A 339W TO3P

IGBT 1200V 60A 339W TO3P

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
FGA30N120FTDTU
IGBT Transistors FGA30N120FTDTU
IGBT Transistors 1200V 30A FS

IGBT Transistors 1200V 30A FS

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1038636-FGA30N120FTDTU FGA30N120FTDTU FGA30N120FTDTU-ND FGA30N120FTDTU FGA30N120FTDTU
Product Name IGBTs - Single - FGA30N120FTDTU Single IGBTs Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
VCE(on) 2 volts
PD 339000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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