IGBT 1200V 60A 339W TO3P
IGBT Trench Field Stop 1200V 60A 339W Through Hole TO-3PN
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038636-FGA30N120FTD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 730ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 208nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 339W
Pulsed Collector Current: 90A
Collector-emitter saturation voltage(Max): 2V @ 15V, 30A
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
Quantity per package: 450
IGBT, 1200V, 30A, Field Stop Trench, 450-TUBE Product overview: FGA30N120FTDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 30A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 30A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA30N120FTDTU can be used for catalog matching and distributor lookup.
IGBT 1200V 60A 339W TO3P
IGBT Transistors 1200V 30A FS
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FGA30N120FTDTU | FGA30N120FTDTU-ND | 1038636-FGA30N120FTDTU | 279-FGA30N120FTDTU | FGA30N120FTDTU | FGA30N120FTDTU |
| Product Name | Single IGBTs | Single IGBTs | IGBTs - Single - FGA30N120FTDTU | 1200V 30A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3; TO-3PN | |||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube |
