IGBT Trench Field Stop 1200V 60A 339W Through Hole TO-3PN
IGBT 1200V 60A 339W TO3P
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038636-FGA30N120FTD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 730ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 208nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 339W
Pulsed Collector Current: 90A
Collector-emitter saturation voltage(Max): 2V @ 15V, 30A
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
Quantity per package: 450
IGBT Transistors 1200V 30A FS
IGBT 1200V 60A 339W TO3P
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FGA30N120FTDTU-ND | FGA30N120FTDTU | 1038636-FGA30N120FTDTU | FGA30N120FTDTU | FGA30N120FTDTU |
| Product Name | Single IGBTs | Single IGBTs | IGBTs - Single - FGA30N120FTDTU | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3; TO-3PN | ||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube |
