Microchip Technology, Inc. Power IGBT Transistor APT50GN60BG

Description
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
Request a Quote Datasheet
Description
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - APT50GN60BG - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APT50GN60BG
Power IGBT Transistor APT50GN60BG
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.

Supplier's Site
Singapore
600V 107A 366W IGBT Transistor
279-APT50GN60BG
600V 107A 366W IGBT Transistor 279-APT50GN60BG
IGBT 600V 107A 366W TO247 Product overview: APT50GN60BG from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 107A, 366W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 107A, 366W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT50GN60BG can be used for catalog matching and distributor lookup.

IGBT 600V 107A 366W TO247 Product overview: APT50GN60BG from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 107A, 366W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 107A, 366W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT50GN60BG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single IGBTs - APT50GN60BG-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
APT50GN60BG-ND
Single IGBTs APT50GN60BG-ND
IGBT Trench Field Stop 600V 107A 366W Through Hole TO-247 [B]

IGBT Trench Field Stop 600V 107A 366W Through Hole TO-247 [B]

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - APT50GN60BG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
APT50GN60BG
Discrete Semiconductor Products - Transistors - IGBTs APT50GN60BG
IGBT 600V 107A 366W TO247

IGBT 600V 107A 366W TO247

Supplier's Site

Technical Specifications

  Richardson RFPD ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number APT50GN60BG 279-APT50GN60BG APT50GN60BG-ND APT50GN60BG
Product Name Power IGBT Transistor 600V 107A 366W IGBT Transistor Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
Package Type TO-247; TO-247 Tube TO-247; TO-247-3
Unlock Full Specs
to access all available technical data