IGBT FIELDSTOP COMBI 600V 50A TO Product overview: APT50GN60BDQ3G from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 50A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 50A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT50GN60BDQ3G can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 600V 107A 366W Through Hole TO-247-3
Manufacturer: Microchip Technology
Win Source Part Number: 861611-APT50GN60BDQ3
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: IGBT Trench Field Stop 600 V 107 A 366 W Through Hole TO-247-3
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: APT50GN60
Categories: Discrete Semiconductor Products
Case / Package: TO-247-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 35 Weeks
HTSUS: 8541.29.0095
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
IGBT FIELDSTOP COMBI 600V 50A TO
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-APT50GN60BDQ3G | 150-APT50GN60BDQ3G-ND | 861611-APT50GN60BDQ3G | APT50GN60BDQ3G | APT50GN60BDQ3G |
| Product Name | 600V 50A IGBT Transistor | Single IGBTs | IGBTs - Single - APT50GN60BDQ3G | Power IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 366 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | Tube | TO-247; TO-247-3 | TO-247; SOT3; TO-247-3 | TO-247; TO-247 |