Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040288-FGA60N65SMD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 47ns
IGBT Type: Field Stop
Input Type: Standard
Gate Charge: 189nC
Family Name: FGA60N65SMD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Maximum Current Collector: 120A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 600W
Pulsed Collector Current: 180A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 60A
Total Switching Energy(Ets): 1.54mJ (on), 450μJ (off)
Turn-on and Turn-off delay time: 18ns/104ns
Testing Conditions: 400V, 60A, 3 Ohm, 15V
Alternative Parts (Cross-Reference): STGWT80V60DF; STGWT80H65DFB; STGWT80H65FB; STGWT80V60F;
Introduction Date: October 27, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Quantity per package: 450
IGBTs 650V, 60A Field Stop IGBT Product overview: FGA60N65SMD from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 60A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 60A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA60N65SMD can be used for catalog matching and distributor lookup.
IGBT Field Stop 650V 120A 600W Through Hole TO-3P
IGBT FIELD STOP 650V 120A TO3P
TO-3P-3 IGBTs ROHS
IGBT Transistors 650V, 60A Field Stop IGBT
IGBT, 650V, 120A, TO-3PN; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3PN; No. of Pins:3Pins; Operating RoHS Compliant: Yes
IGBT FIELD STOP 650V 120A TO3P
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 040288-FGA60N65SMD | 8648795P | 8648795 | 279-FGA60N65SMD | FGA60N65SMDFS-ND | FGA60N65SMD | FGA60N65SMD | FGA60N65SMD | 46AC0815 | FGA60N65SMD |
| Product Name | IGBTs - Single - FGA60N65SMD | IGBTs | IGBTs | 650V 60A IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Triode/MOS Tube/Transistor >> IGBTs | IGBT Transistors | Igbt, 650V, 120A, To-3Pn; Dc Collector Current Onsemi | Single IGBTs |
| VCE(on) | 2.5 volts | |||||||||
| PD | 600000 milliwatts | 600 milliwatts | 600000 milliwatts | |||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | TO-3; SOT3; TO-3PN | TO-3PN | To-3pn | Tube | TO-3; TO-3P-3, SC-65-3 | TO-3 | TO-3 | TO-3; TO-3P-3, SC-65-3 |
