IGBT PT COMBI 1200V 35A TO-247 Product overview: APT35GP120B2D2G from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 35A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 35A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT35GP120B2D2G can be used for catalog matching and distributor lookup.
IGBT PT 1200V 96A 540W Through Hole T-MAX™ [B2]
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
Manufacturer: Microchip Technology
Win Source Part Number: 861604-APT35GP120B2D
Series: POWER MOS 7®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: IGBT PT 1200 V 96 A 540 W Through Hole T-MAX™ [B2]
Package: TO-247-3 Variant
Package: Tube
Mounting: Through Hole
Family Name: APT35
Categories: Discrete Semiconductor Products
Case / Package: T-MAX™ [B2]
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 35 Weeks
HTSUS: 8541.29.0095
IGBT PT COMBI 1200V 35A TO-247
| ERSAELECTRONICS PTE. LTD. | DigiKey | Richardson RFPD | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-APT35GP120B2D2G | 150-APT35GP120B2D2G-ND | APT35GP120B2D2G | 861604-APT35GP120B2D2G | APT35GP120B2D2G |
| Product Name | 1200V 35A IGBT Transistor | Single IGBTs | Power IGBT Transistor | IGBTs - Single - APT35GP120B2D2G | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 543 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tube | TO-247; TO-247-3 Variant | TO-247; TO-247 | TO-247; SOT3; T-MAX™ [B2] |
