IGBT TRENCH/FS 650V 120A TO3PN
IGBTs IGBT, 650 V, 60 A Field Stop Trench Product overview: FGA6560WDF from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 60 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 60 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA6560WDF can be used for catalog matching and distributor lookup.
IGBT, 650 V, 60 A Field Stop Trench
IGBT Trench Field Stop 650V 120A 306W Through Hole TO-3PN
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204172-FGA6560WDF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 110ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 84nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Maximum Current Collector: 120A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 306W
Pulsed Collector Current: 180A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 60A
Total Switching Energy(Ets): 2.46mJ (on), 520μJ (off)
Turn-on and Turn-off delay time: 25.6ns/71ns
Testing Conditions: 400V, 60A, 6 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 450
TO-3PN IGBTs ROHS
IGBT TRENCH/FS 650V 120A TO3PN
IGBT Transistors FS3TIGBT TO3PN 60A 650V
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | Win Source Electronics | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FGA6560WDF | 279-FGA6560WDF | FGA6560WDF | FGA6560WDF-ND | 204172-FGA6560WDF | FGA6560WDF | FGA6560WDF | FGA6560WDF |
| Product Name | Single IGBTs | 650 V 60 A IGBT Transistor | Single IGBTs | IGBTs - Single - FGA6560WDF | Triode/MOS Tube/Transistor >> IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-3; TO-3P-3, SC-65-3 | Tube | TO-3; TO-3P-3L | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3; TO-3PN | TO-3 | ||
| PD | 306 milliwatts | 306000 milliwatts |
