onsemi IGBTs - Single - FGA6560WDF FGA6560WDF

Description
IGBT, 650 V, 60 A Field Stop Trench
  • FGA6560WDF - Rochester Electronics
    Rochester Electronics
  • IGBTs - Single - FGA6560WDF - 204172-FGA6560WDF - Win Source Electronics
    Win Source Electronics
  • Single IGBTs - FGA6560WDF-ND - DigiKey
    DigiKey
  • Single IGBTs - FGA6560WDF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - IGBTs - FGA6560WDF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
IGBT, 650 V, 60 A Field Stop Trench
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- FGA6560WDF - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FGA6560WDF
FGA6560WDF
IGBT, 650 V, 60 A Field Stop Trench

IGBT, 650 V, 60 A Field Stop Trench

Supplier's Site Datasheet
IGBTs - Single - FGA6560WDF - 204172-FGA6560WDF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGA6560WDF
204172-FGA6560WDF
IGBTs - Single - FGA6560WDF 204172-FGA6560WDF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204172-FGA6560WDF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 110ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 84nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Maximum Current Collector: 120A VCEO Maximum Collector-Emitter Breakdown Voltage: 650V Maximum Power Dissipation: 306W Pulsed Collector Current: 180A Collector-emitter saturation voltage(Max): 2.3V @ 15V, 60A Total Switching Energy(Ets): 2.46mJ (on), 520μJ (off) Turn-on and Turn-off delay time: 25.6ns/71ns Testing Conditions: 400V, 60A, 6 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204172-FGA6560WDF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 110ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 84nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Maximum Current Collector: 120A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 306W
Pulsed Collector Current: 180A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 60A
Total Switching Energy(Ets): 2.46mJ (on), 520μJ (off)
Turn-on and Turn-off delay time: 25.6ns/71ns
Testing Conditions: 400V, 60A, 6 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Single IGBTs - FGA6560WDF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGA6560WDF-ND
Single IGBTs FGA6560WDF-ND
IGBT Trench Field Stop 650V 120A 306W Through Hole TO-3PN

IGBT Trench Field Stop 650V 120A 306W Through Hole TO-3PN

Buy Now Datasheet
Single IGBTs - FGA6560WDF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
FGA6560WDF
Single IGBTs FGA6560WDF
IGBT TRENCH/FS 650V 120A TO3PN

IGBT TRENCH/FS 650V 120A TO3PN

Supplier's Site Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> IGBTs
FGA6560WDF
Triode/MOS Tube/Transistor >> IGBTs FGA6560WDF
TO-3PN IGBTs ROHS

TO-3PN IGBTs ROHS

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
FGA6560WDF
IGBT Transistors FGA6560WDF
IGBT Transistors FS3TIGBT TO3PN 60A 650V

IGBT Transistors FS3TIGBT TO3PN 60A 650V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGA6560WDF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGA6560WDF
Discrete Semiconductor Products - Transistors - IGBTs FGA6560WDF
IGBT TRENCH/FS 650V 120A TO3PN

IGBT TRENCH/FS 650V 120A TO3PN

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGA6560WDF 204172-FGA6560WDF FGA6560WDF-ND FGA6560WDF FGA6560WDF FGA6560WDF FGA6560WDF
Product Name IGBTs - Single - FGA6560WDF Single IGBTs Single IGBTs Triode/MOS Tube/Transistor >> IGBTs IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
Package Type TO-3; TO-3P-3L TO-3; SOT3; TO-3PN TO-3; TO-3P-3, SC-65-3 TO-3; TO-3P-3, SC-65-3 TO-3
Packing Method Tube; Tube Rail; Tube; Tube/Rail Tube Tube; Tube
VCE(on) 2.3 volts
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