Bourns, Inc. Single IGBTs BIDW75N65EH5

The BIDW75N65EH5 is a trench-gate field-stop IGBT for high-voltage switching applications including SMPS, UPS, and PFC. It is packaged in a TO-247-3L case with a 21.00 mm lead pitch. The device rated for 650 V collector-emitter voltage and 75 A continuous collector current at 100 °C case temperature, with a maximum junction temperature of 175 °C. It exhibits a collector-emitter saturation voltage of 2.05 V at 150 °C and 75 A. Total power dissipation is 394 W with a junction-to-case thermal resistance of 0.38 °C/W. Switching performance includes a turn-off delay of 186 ns, current fall time of 38 ns, and total switching energy of 3.29 mJ under inductive load. A built-in freewheeling diode has a reverse recovery time of 120 ns at 75 A and 200 A/µs di/dt. The component is RoHS compliant.