Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
IGBT Trench Field Stop 600V 107A 366W Through Hole TO-247 [B]
IGBT 600V 107A 366W TO247
IGBT 600V 107A 366W TO247
| Richardson RFPD | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT50GN60BDQ2G | APT50GN60BDQ2G-ND | APT50GN60BDQ2G | APT50GN60BDQ2G |
| Product Name | Power IGBT Transistor | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs |
| Package Type | TO-247; TO-247 | TO-247; TO-247-3 | TO-247; TO-247-3 |
