Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
IGBT Trench Field Stop 600V 107A 366W Through Hole TO-247 [B]
IGBT 600V 107A 366W TO247
IGBT 600V 107A 366W TO247 Product overview: APT50GN60BDQ2G from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 107A, 366W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 107A, 366W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT50GN60BDQ2G can be used for catalog matching and distributor lookup.
IGBT 600V 107A 366W TO247
| Richardson RFPD | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT50GN60BDQ2G | APT50GN60BDQ2G-ND | APT50GN60BDQ2G | 279-APT50GN60BDQ2G | APT50GN60BDQ2G |
| Product Name | Power IGBT Transistor | Single IGBTs | Single IGBTs | 600V 107A 366W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs |
| Package Type | TO-247; TO-247 | TO-247; TO-247-3 | TO-247; TO-247-3 | Tube |
