Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
IGBT Trench Field Stop 600V 229A 625W Through Hole TO-264 [L]
IGBT 600V 229A 625W TO264 Product overview: APT100GN60LDQ4G from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 229A, 625W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 229A, 625W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT100GN60LDQ4G can be used for catalog matching and distributor lookup.
IGBT 600V 229A 625W TO264
| Richardson RFPD | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT100GN60LDQ4G | APT100GN60LDQ4G-ND | 279-APT100GN60LDQ4G | APT100GN60LDQ4G |
| Product Name | Power IGBT Transistor | Single IGBTs | 600V 229A 625W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs |
| Package Type | TO-264 | TO-264-3, TO-264AA | Tube |
