onsemi Single IGBTs AFGY120T65SPD

Description
IGBT Trench Field Stop 650V 160A 714W Through Hole TO-247-3
Request a Quote Datasheet
Description
IGBT Trench Field Stop 650V 160A 714W Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 488-AFGY120T65SPD-ND - DigiKey
Thief River Falls, MN, United States
IGBT Trench Field Stop 650V 160A 714W Through Hole TO-247-3

IGBT Trench Field Stop 650V 160A 714W Through Hole TO-247-3

Buy Now Datasheet
IGBTs - 2148787 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
2148787
IGBTs 2148787
ON Semiconductor AFGY120T65SPD

ON Semiconductor AFGY120T65SPD

Supplier's Site
IGBTs - 2148789 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
2148789
IGBTs 2148789
ON Semiconductor AFGY120T65SPD

ON Semiconductor AFGY120T65SPD

Supplier's Site
IGBTs - 2148789P - RS Components, Ltd.
Corby, Northants, United Kingdom
ON Semiconductor AFGY120T65SPD

ON Semiconductor AFGY120T65SPD

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1376593-AFGY120T65SPD - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
1376593-AFGY120T65SPD
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs 1376593-AFGY120T65SPD
Win Source Part Number: 1376593-AFGY120T65SP D Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Temperature Range - Operating: -55°C ~ 175°C (TJ) Fake Threat In the Open Market: 51 pct. MSL Level: Not Applicable Mfr: onsemi Series: Automotive, AEC-Q101 Package: Tube Product Status: Active Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Base Product Number: AFGY120 Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Test Condition: 400V, 120A, 5Ohm, 15V Reverse Recovery Time (trr): 107 ns Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 714 W Input Type: Standard IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 360 A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A Switching Energy: 6.6mJ (on), 3.8mJ (off) Gate Charge: 125 nC Td (on/off) @ 25°C: 40ns/80ns

Win Source Part Number: 1376593-AFGY120T65SPD
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 51 pct.
MSL Level: Not Applicable
Mfr: onsemi
Series: Automotive, AEC-Q101
Package: Tube
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Base Product Number: AFGY120
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Test Condition: 400V, 120A, 5Ohm, 15V
Reverse Recovery Time (trr): 107 ns
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 714 W
Input Type: Standard
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 360 A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
Switching Energy: 6.6mJ (on), 3.8mJ (off)
Gate Charge: 125 nC
Td (on/off) @ 25°C: 40ns/80ns

Buy Now Datasheet
Singapore, Singapore
650 V 120 A IGBT Transistor
279-AFGY120T65SPD
650 V 120 A IGBT Transistor 279-AFGY120T65SPD
IGBT - 650 V 120 A FS3 FOR EV TR Product overview: AFGY120T65SPD from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 120 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 120 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-AFGY120T65SPD can be used for catalog matching and distributor lookup.

IGBT - 650 V 120 A FS3 FOR EV TR Product overview: AFGY120T65SPD from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 120 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 120 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-AFGY120T65SPD can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Igbt, 650V, 120A, 175Deg C, 714W Rohs Compliant Onsemi - 12AJ6778 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, 650V, 120A, 175Deg C, 714W Rohs Compliant Onsemi
12AJ6778
Igbt, 650V, 120A, 175Deg C, 714W Rohs Compliant Onsemi 12AJ6778
IGBT, 650V, 120A, 175DEG C, 714W ROHS COMPLIANT: YES

IGBT, 650V, 120A, 175DEG C, 714W ROHS COMPLIANT: YES

Supplier's Site
Single IGBTs - AFGY120T65SPD - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
AFGY120T65SPD
Single IGBTs AFGY120T65SPD
IGBT - 650 V 120 A FS3 FOR EV TR

IGBT - 650 V 120 A FS3 FOR EV TR

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - AFGY120T65SPD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
AFGY120T65SPD
Discrete Semiconductor Products - Transistors - IGBTs AFGY120T65SPD
IGBT - 650 V 120 A FS3 FOR EV TR

IGBT - 650 V 120 A FS3 FOR EV TR

Supplier's Site

Technical Specifications

  DigiKey RS Components, Ltd. RS Components, Ltd. Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 488-AFGY120T65SPD-ND 2148787 2148789P 1376593-AFGY120T65SPD 279-AFGY120T65SPD 12AJ6778 AFGY120T65SPD AFGY120T65SPD
Product Name Single IGBTs IGBTs IGBTs Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs 650 V 120 A IGBT Transistor Igbt, 650V, 120A, 175Deg C, 714W Rohs Compliant Onsemi Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-247; TO-247-3 TO-247; To-247 TO-247; TO-247 TO-247; SOT3 Tube TO-3 TO-247; TO-247-3 Automotive
Packing Method Tube Tube Tube; Tube
Transistor Grade / Operating Range Automotive
Structure Trench Field Stop
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