IGBT Trench Field Stop 650V 160A 714W Through Hole TO-247-3
Win Source Part Number: 1376593-AFGY120T65SP
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 51 pct.
MSL Level: Not Applicable
Mfr: onsemi
Series: Automotive, AEC-Q101
Package: Tube
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Base Product Number: AFGY120
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Test Condition: 400V, 120A, 5Ohm, 15V
Reverse Recovery Time (trr): 107 ns
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 714 W
Input Type: Standard
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 360 A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
Switching Energy: 6.6mJ (on), 3.8mJ (off)
Gate Charge: 125 nC
Td (on/off) @ 25°C: 40ns/80ns
IGBT - 650 V 120 A FS3 FOR EV TR Product overview: AFGY120T65SPD from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 120 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 120 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-AFGY120T65SPD can be used for catalog matching and distributor lookup.
IGBT, 650V, 120A, 175DEG C, 714W ROHS COMPLIANT: YES
IGBT - 650 V 120 A FS3 FOR EV TR
IGBT - 650 V 120 A FS3 FOR EV TR
| DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 488-AFGY120T65SPD-ND | 2148787 | 2148789P | 1376593-AFGY120T65SPD | 279-AFGY120T65SPD | 12AJ6778 | AFGY120T65SPD | AFGY120T65SPD |
| Product Name | Single IGBTs | IGBTs | IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs | 650 V 120 A IGBT Transistor | Igbt, 650V, 120A, 175Deg C, 714W Rohs Compliant Onsemi | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-247; TO-247-3 | TO-247; To-247 | TO-247; TO-247 | TO-247; SOT3 | Tube | TO-3 | TO-247; TO-247-3 | Automotive |
| Packing Method | Tube | Tube | Tube; Tube | |||||
| Transistor Grade / Operating Range | Automotive | |||||||
| Structure | Trench Field Stop |