IGBT Trench Field Stop 650V 80A 268W Through Hole TO-3PN
Win Source Part Number: 1013901-FGA40T65SHDF
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 1
Power - Max: 268 W
Reverse Recovery Time (trr): 101 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
Switching Energy: 1.22mJ (on), 440µJ (off)
Input Type: Standard
Gate Charge: 68 nC
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 40A, 6Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
HTSUS: 8542.39.0001
Mfr: Fairchild Semiconductor
Other Names: 2156-FGA40T65SHDF,ON
IGBTs IGBT, 650 V, 40 A Field Stop Trench Product overview: FGA40T65SHDF from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 40 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 40 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA40T65SHDF can be used for catalog matching and distributor lookup.
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| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FGA40T65SHDF-ND | 1013901-FGA40T65SHDF | 279-FGA40T65SHDF | FGA40T65SHDF | FGA40T65SHDF | FGA40T65SHDF |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | 650 V 40 A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3 | Tube | TO-3; TO-3P-3L | ||
| Packing Method | Tube | Tube | Tube; Tube | Tube; Tube |