IGBT PT 1200V 69A 417W Through Hole TO-247 [B]
IGBT 1200V 69A 417W TO247 Product overview: APT25GP120BG from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 69A, 417W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 69A, 417W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT25GP120BG can be used for catalog matching and distributor lookup.
A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch mode power supplies and tail current sensitive applications. In many cases, the Power MOS 7® IGBT provides a lower cost alternative to a Power MOSFET.
IGBT 1200V 69A 417W TO247
| DigiKey | ERSAELECTRONICS PTE. LTD. | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT25GP120BG-ND | 279-APT25GP120BG | APT25GP120BG | APT25GP120BG |
| Product Name | Single IGBTs | 1200V 69A 417W IGBT Transistor | Power IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
