Alpha & Omega Semiconductor, Ltd. Single IGBTs AOT10B65M2

Description
IGBT 650V 20A 150W Through Hole TO-220
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Description
IGBT 650V 20A 150W Through Hole TO-220
Request a Quote Datasheet

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Product
Description
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Single IGBTs - 785-1762-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
785-1762-ND
Single IGBTs 785-1762-ND
IGBT 650V 20A 150W Through Hole TO-220

IGBT 650V 20A 150W Through Hole TO-220

Buy Now Datasheet
IGBTs - Single - AOT10B65M2 - 803605-AOT10B65M2 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - AOT10B65M2
803605-AOT10B65M2
IGBTs - Single - AOT10B65M2 803605-AOT10B65M2
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 803605-AOT10B65M2 Packaging: Tube Mounting Style: Through Hole Power - Max: 150W Reverse Recovery Time (trr): 262ns Current - Collector Pulsed (Icm): 30A Switching Energy: 180μJ (on), 130μJ (off) Input Type: Standard Gate Charge: 24nC Test Condition: 400V, 10A, 30Ohm, 15V Supplier Device Package: TO-220 Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-220-3 Current - Collector (Ic) (Maximum): 20A Voltage - Collector Emitter Breakdown (Maximum): 650V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vce(on) (Maximum) at Vge, Ic: 2V at 15V, 10A Td (on/off) at 25°C: 12ns/91ns

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 803605-AOT10B65M2
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 150W
Reverse Recovery Time (trr): 262ns
Current - Collector Pulsed (Icm): 30A
Switching Energy: 180μJ (on), 130μJ (off)
Input Type: Standard
Gate Charge: 24nC
Test Condition: 400V, 10A, 30Ohm, 15V
Supplier Device Package: TO-220
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Current - Collector (Ic) (Maximum): 20A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vce(on) (Maximum) at Vge, Ic: 2V at 15V, 10A
Td (on/off) at 25°C: 12ns/91ns

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Discrete Semiconductor Products - Transistors - IGBTs - AOT10B65M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
AOT10B65M2
Discrete Semiconductor Products - Transistors - IGBTs AOT10B65M2
IGBT 650V 10A TO220

IGBT 650V 10A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 785-1762-ND 803605-AOT10B65M2 AOT10B65M2
Product Name Single IGBTs IGBTs - Single - AOT10B65M2 Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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