IGBT 650V 30A 214W Through Hole TO-220
IGBT 650V 15A TO220 Product overview: AOT15B65M1 from Alpha and Omega Semiconductor, Inc. is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 15A, TO220. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 15A, TO220. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-AOT15B65M1 can be used for catalog matching and distributor lookup.
Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 768567-AOT15B65M1
Series: Alpha IGBT
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-220-3
Power - Max: 214W
Reverse Recovery Time (trr): 317ns
Current - Collector Pulsed (Icm): 45A
Switching Energy: 290μJ (on), 200μJ (off)
Input Type: Standard
Gate Charge: 32nC
Td (on/off) @ 25°C: 13ns/116ns
Test Condition: 400V, 15A, 20 Ohm, 15V
Family Name: AOT15B65M1
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-220
Current - Collector (Ic) (Maximum): 30A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Vce(on) (Maximum) @ Vge, Ic: 2.15V @ 15V, 15A
Introduction Date: June 02, 2015
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Popularity: Medium
Fake Threat In the Open Market: 77 pct.
Supply and Demand Status: Balance
IGBT 650V 15A TO220
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | AOT15B65M1 | 785-1763-ND | 279-AOT15B65M1 | 768567-AOT15B65M1 | AOT15B65M1 | 62-AOT15B65M1 |
| Product Name | Single IGBTs | Single IGBTs | 650V 15A TO220 IGBT Transistor | IGBTs - Single - AOT15B65M1 | Discrete Semiconductor Products - Transistors - IGBTs | IGBT 650V 15A TO220 |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | Tube | TO-220; SOT3 | ||
| Packing Method | Tube | Tube | Tube; Tube | Tube; Tube | Tube; Tube |