onsemi Single IGBTs AFGBG70T65SQ

The AFGBG70T65SQ is a 650 V, 70 A N-channel field stop IV IGBT in a D2PAK-7L-LV (TO-263-7LD) package measuring 15.4 mm × 9.9 mm × 4.5 mm, designed for high-efficiency automotive HEV/EV onboard chargers, DC-DC converters, and totem pole bridgeless PFC applications. It features a typical collector-to-emitter saturation voltage of 1.55 V at 70 A and 25°C, a maximum junction temperature of 175°C, and a thermal resistance junction-to-case of 0.29 °C/W. The device is AEC-Q101 qualified and PPAP capable, with tight parameter distribution, positive temperature coefficient for parallel operation, and low switching losses. Its gate threshold voltage ranges from 3.4 V to 6.4 V, and total gate charge is 140.6 nC at 15 V gate drive and 70 A collector current.