onsemi Single IGBTs FGA30N65SMD

IGBT Field Stop 650V 60A 300W Through Hole TO-3PN

Manufacturer: ON Semiconductor
Win Source Part Number: 811911-FGA30N65SMD
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 300W
Reverse Recovery Time (trr): 35ns
IGBT Type: Field Stop
Current - Collector Pulsed (Icm): 90A
Switching Energy: 716μJ (on), 208μJ (off)
Input Type: Standard
Gate Charge: 87nC
Test Condition: 400V, 30A, 6Ohm, 15V
Supplier Device Package: TO-3PN
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-3P-3, SC-65-3
Current - Collector (Ic) (Maximum): 60A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Popularity: Low
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 450
MSL Level: 1 (Unlimited)
Vce(on) (Maximum) at Vge, Ic: 2.5V at 15V, 30A
Td (on/off) at 25°C: 14ns/102ns

IGBT, 650V, 30A, Field Stop, 450-TUBE Product overview: FGA30N65SMD from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 30A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 30A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA30N65SMD can be used for catalog matching and distributor lookup.