onsemi 600V 28A 125W IGBT Transistor FGH20N6S2D

Description
IGBT 600V 28A 125W TO247 Product overview: FGH20N6S2D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 28A, 125W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 28A, 125W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH20N6S2D can be used for catalog matching and distributor lookup.
Request a Quote Datasheet
Description
IGBT 600V 28A 125W TO247 Product overview: FGH20N6S2D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 28A, 125W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 28A, 125W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH20N6S2D can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
600V 28A 125W IGBT Transistor
279-FGH20N6S2D
600V 28A 125W IGBT Transistor 279-FGH20N6S2D
IGBT 600V 28A 125W TO247 Product overview: FGH20N6S2D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 28A, 125W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 28A, 125W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH20N6S2D can be used for catalog matching and distributor lookup.

IGBT 600V 28A 125W TO247 Product overview: FGH20N6S2D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 28A, 125W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 28A, 125W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH20N6S2D can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - FGH20N6S2D - 1038661-FGH20N6S2D - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGH20N6S2D
1038661-FGH20N6S2D
IGBTs - Single - FGH20N6S2D 1038661-FGH20N6S2D
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038661-FGH20N6S2D Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 31ns Input Type: Standard Gate Charge: 30nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Maximum Current Collector: 28A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 125W Pulsed Collector Current: 40A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 7A Total Switching Energy(Ets): 25μJ (on), 58μJ (off) Turn-on and Turn-off delay time: 7.7ns/87ns Testing Conditions: 390V, 7A, 25 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038661-FGH20N6S2D
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 31ns
Input Type: Standard
Gate Charge: 30nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Maximum Current Collector: 28A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 125W
Pulsed Collector Current: 40A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 7A
Total Switching Energy(Ets): 25μJ (on), 58μJ (off)
Turn-on and Turn-off delay time: 7.7ns/87ns
Testing Conditions: 390V, 7A, 25 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single IGBTs - FGH20N6S2D-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGH20N6S2D-ND
Single IGBTs FGH20N6S2D-ND
IGBT 600V 28A 125W Through Hole TO-247-3

IGBT 600V 28A 125W Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGH20N6S2D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGH20N6S2D
Discrete Semiconductor Products - Transistors - IGBTs FGH20N6S2D
IGBT 600V 28A 125W TO247

IGBT 600V 28A 125W TO247

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 279-FGH20N6S2D 1038661-FGH20N6S2D FGH20N6S2D-ND FGH20N6S2D
Product Name 600V 28A 125W IGBT Transistor IGBTs - Single - FGH20N6S2D Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
PD 125000 milliwatts 125000 milliwatts
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