onsemi Single IGBTs FGH20N6S2D

Description
IGBT 600V 28A 125W Through Hole TO-247-3
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Description
IGBT 600V 28A 125W Through Hole TO-247-3
Request a Quote Datasheet

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Product
Description
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Single IGBTs - FGH20N6S2D-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGH20N6S2D-ND
Single IGBTs FGH20N6S2D-ND
IGBT 600V 28A 125W Through Hole TO-247-3

IGBT 600V 28A 125W Through Hole TO-247-3

Buy Now Datasheet
IGBTs - Single - FGH20N6S2D - 1038661-FGH20N6S2D - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGH20N6S2D
1038661-FGH20N6S2D
IGBTs - Single - FGH20N6S2D 1038661-FGH20N6S2D
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038661-FGH20N6S2D Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 31ns Input Type: Standard Gate Charge: 30nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Maximum Current Collector: 28A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 125W Pulsed Collector Current: 40A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 7A Total Switching Energy(Ets): 25μJ (on), 58μJ (off) Turn-on and Turn-off delay time: 7.7ns/87ns Testing Conditions: 390V, 7A, 25 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038661-FGH20N6S2D
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 31ns
Input Type: Standard
Gate Charge: 30nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Maximum Current Collector: 28A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 125W
Pulsed Collector Current: 40A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 7A
Total Switching Energy(Ets): 25μJ (on), 58μJ (off)
Turn-on and Turn-off delay time: 7.7ns/87ns
Testing Conditions: 390V, 7A, 25 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGH20N6S2D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGH20N6S2D
Discrete Semiconductor Products - Transistors - IGBTs FGH20N6S2D
IGBT 600V 28A 125W TO247

IGBT 600V 28A 125W TO247

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGH20N6S2D-ND 1038661-FGH20N6S2D FGH20N6S2D
Product Name Single IGBTs IGBTs - Single - FGH20N6S2D Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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