onsemi IGBTs - Single - FGH60N6S2 FGH60N6S2

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038679-FGH60N6S2 Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Gate Charge: 140nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 625W Pulsed Collector Current: 320A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 40A Total Switching Energy(Ets): 400μJ (on), 310μJ (off) Turn-on and Turn-off delay time: 18ns/70ns Testing Conditions: 390V, 40A, 3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038679-FGH60N6S2 Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Gate Charge: 140nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 625W Pulsed Collector Current: 320A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 40A Total Switching Energy(Ets): 400μJ (on), 310μJ (off) Turn-on and Turn-off delay time: 18ns/70ns Testing Conditions: 390V, 40A, 3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - FGH60N6S2 - 1038679-FGH60N6S2 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGH60N6S2
1038679-FGH60N6S2
IGBTs - Single - FGH60N6S2 1038679-FGH60N6S2
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038679-FGH60N6S2 Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Gate Charge: 140nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 625W Pulsed Collector Current: 320A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 40A Total Switching Energy(Ets): 400μJ (on), 310μJ (off) Turn-on and Turn-off delay time: 18ns/70ns Testing Conditions: 390V, 40A, 3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038679-FGH60N6S2
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 140nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 625W
Pulsed Collector Current: 320A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 40A
Total Switching Energy(Ets): 400μJ (on), 310μJ (off)
Turn-on and Turn-off delay time: 18ns/70ns
Testing Conditions: 390V, 40A, 3 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single IGBTs - FGH60N6S2-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGH60N6S2-ND
Single IGBTs FGH60N6S2-ND
IGBT 600V 75A 625W Through Hole TO-247-3

IGBT 600V 75A 625W Through Hole TO-247-3

Buy Now Datasheet
Singapore
600V 75A 625W IGBT Transistor
279-FGH60N6S2
600V 75A 625W IGBT Transistor 279-FGH60N6S2
IGBT 600V 75A 625W TO247 Product overview: FGH60N6S2 from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 75A, 625W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 75A, 625W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH60N6S2 can be used for catalog matching and distributor lookup.

IGBT 600V 75A 625W TO247 Product overview: FGH60N6S2 from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 75A, 625W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 75A, 625W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH60N6S2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGH60N6S2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGH60N6S2
Discrete Semiconductor Products - Transistors - IGBTs FGH60N6S2
IGBT 600V 75A 625W TO247

IGBT 600V 75A 625W TO247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1038679-FGH60N6S2 FGH60N6S2-ND 279-FGH60N6S2 FGH60N6S2
Product Name IGBTs - Single - FGH60N6S2 Single IGBTs 600V 75A 625W IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2.5 volts
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