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Insulated Gate Bipolar Transistors (IGBT) Datasheets

Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching).
Search By Specification | Manufacturers and Distributors | Insulated Gate Bipolar Transistors (IGBT): Selection Guide

Insulated Gate Bipolar Transistors (IGBT) Datasheets From:
Headquarters
Allen-Bradley / Rockwell Automation
Milwaukee, WI
Digi-Key Electronics
Thief River Falls, MN
Infineon Technologies AG
Germany
Littelfuse, Inc.
United States
Mornsun America,LLC
United States
Radwell International
Willingboro, NJ
Richardson RFPD
Geneva, IL
ROHM Semiconductor GmbH
Germany
RS Components, Ltd.
United Kingdom
Allied Electronics, Inc.
Fort Worth, TX
Fuji Electric Corp. of America
Edison, NJ
Karl Kruse GmbH & Co. KG
Germany
Kyocera Corporation
Japan
ROHM Semiconductor USA, LLC
Santa Clara, CA
Semikron, Inc.
Hudson, NH
Solid State Devices, Inc.
La Mirada, CA
Toshiba America, Inc.
New York, NY