Insulated Gate Bipolar Transistors (IGBT) Datasheets

Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching).
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Insulated Gate Bipolar Transistors (IGBT) Datasheets From:
Headquarters
Allen-Bradley / Rockwell Automation
United States
Digi-Key Electronics
Thief River Falls, MN
Fuji Electric Corp. of America
United States
Infineon Technologies AG
Germany
Littelfuse, Inc.
United States
Newark, An Avnet Company
United States
Richardson RFPD
United States
ROHM Semiconductor GmbH
Germany
RS Components, Ltd.
United Kingdom
Allied Electronics, Inc.
Fort Worth, TX
Karl Kruse GmbH & Co. KG
Germany
Kyocera Corporation
Japan
ROHM Semiconductor USA, LLC
Santa Clara, CA
Semikron, Inc.
Hudson, NH
Solid State Devices, Inc.
La Mirada, CA
Toshiba America, Inc.
New York, NY