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Insulated Gate Bipolar Transistors (IGBT) Datasheets

Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching).
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Insulated Gate Bipolar Transistors (IGBT) Datasheets From:
Headquarters
Digi-Key Electronics
Thief River Falls, MN
Infineon Technologies AG
Germany
Littelfuse, Inc.
Chicago, IL
Radwell International
Willingboro, NJ
Richardson RFPD
Geneva, IL
ROHM Semiconductor GmbH
Germany
ROHM Semiconductor USA, LLC
Santa Clara, CA
RS Components, Ltd.
United Kingdom
Allied Electronics, Inc.
Fort Worth, TX
Fuji Electric Corp. of America
Edison, NJ
Karl Kruse GmbH & Co. KG
Germany
Kyocera Corporation
Japan
Newark, An Avnet Company
Chicago, IL
Semikron, Inc.
Hudson, NH
Solid State Devices, Inc.
La Mirada, CA
Toshiba America, Inc.
New York, NY