onsemi Single IGBTs FGH60N60UFDTU

Description
IGBT Field Stop 600V 120A 298W Through Hole TO-247-3
Request a Quote Datasheet
Description
IGBT Field Stop 600V 120A 298W Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - FGH60N60UFDTU-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGH60N60UFDTU-ND
Single IGBTs FGH60N60UFDTU-ND
IGBT Field Stop 600V 120A 298W Through Hole TO-247-3

IGBT Field Stop 600V 120A 298W Through Hole TO-247-3

Buy Now Datasheet
Singapore, Singapore
600V 60A IGBT Transistor
279-FGH60N60UFDTU
600V 60A IGBT Transistor 279-FGH60N60UFDTU
600V 60A IGBT TO-247 Low VCE(ON) Field Stop Transistor Product overview: FGH60N60UFDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 60A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 60A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH60N60UFDTU can be used for catalog matching and distributor lookup.

600V 60A IGBT TO-247 Low VCE(ON) Field Stop Transistor Product overview: FGH60N60UFDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 60A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 60A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH60N60UFDTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - FGH60N60UFDTU - 087062-FGH60N60UFDTU - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGH60N60UFDTU
087062-FGH60N60UFDTU
IGBTs - Single - FGH60N60UFDTU 087062-FGH60N60UFDTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 087062-FGH60N60UFDTU Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 76ns IGBT Type: Field Stop Input Type: Standard Gate Charge: 192nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Maximum Current Collector: 120A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 298W Pulsed Collector Current: 180A Collector-emitter saturation voltage(Max): 2.9V @ 15V, 60A Total Switching Energy(Ets): 2.47mJ (on), 810μJ (off) Turn-on and Turn-off delay time: 29ns/138ns Testing Conditions: 400V, 60A, 5 Ohm, 15V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 087062-FGH60N60UFDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 76ns
IGBT Type: Field Stop
Input Type: Standard
Gate Charge: 192nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 120A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 298W
Pulsed Collector Current: 180A
Collector-emitter saturation voltage(Max): 2.9V @ 15V, 60A
Total Switching Energy(Ets): 2.47mJ (on), 810μJ (off)
Turn-on and Turn-off delay time: 29ns/138ns
Testing Conditions: 400V, 60A, 5 Ohm, 15V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
FGH60N60UFDTU
IGBT Transistors FGH60N60UFDTU
IGBT Transistors N-Ch/ 60A 600V FS

IGBT Transistors N-Ch/ 60A 600V FS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGH60N60UFDTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGH60N60UFDTU
Discrete Semiconductor Products - Transistors - IGBTs FGH60N60UFDTU
IGBT 600V 120A 298W TO247

IGBT 600V 120A 298W TO247

Supplier's Site
Single IGBTs - FGH60N60UFDTU - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
FGH60N60UFDTU
Single IGBTs FGH60N60UFDTU
IGBT 600V 120A 298W TO247

IGBT 600V 120A 298W TO247

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGH60N60UFDTU-ND 279-FGH60N60UFDTU 087062-FGH60N60UFDTU FGH60N60UFDTU FGH60N60UFDTU FGH60N60UFDTU
Product Name Single IGBTs 600V 60A IGBT Transistor IGBTs - Single - FGH60N60UFDTU IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs Single IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247 TO-247; TO-247-3
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube
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