Diotec Semiconductor Single IGBTs DIW040M120

The DIW040M120 is a medium fast switching IGBT with a reverse diode, rated for 1200 V collector-emitter voltage and 40 A continuous collector current at 100°C, housed in a TO-247 package. It has a typical collector-emitter saturation voltage of 1.74 V at 25°C and a maximum junction temperature of 175°C. Power dissipation is 330 W at 25°C, with thermal resistance from junction to case of 0.45 K/W for the IGBT and 0.70 K/W for the diode. The device is AEC-Q101 compliant in -Q variants, meets RoHS (excluding 7a-I), REACH, and Conflict Minerals requirements, and is certified to UL 94 V-0 for case material. The TO-247 package is mounted in tubes or cardboards, with soldering conditions of 260°C for 10 seconds.