Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040290-FGAF40N60UFTU
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 77nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PF
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 100W
Pulsed Collector Current: 160A
Collector-emitter saturation voltage(Max): 3V @ 15V, 20A
Total Switching Energy(Ets): 470μJ (on), 130μJ (off)
Turn-on and Turn-off delay time: 15ns/65ns
Testing Conditions: 300V, 20A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Quantity per package: 360
600V 40A IGBT Transistor, Through Hole, SC Package Product overview: FGAF40N60UFTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 600V, 40A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, Through-Hole, 600V, 40A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGAF40N60UFTU can be used for catalog matching and distributor lookup.
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| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 040290-FGAF40N60UFTU | 279-FGAF40N60UFTU | 7599257P | 7599257 | FGAF40N60UFTU-ND | FGAF40N60UFTU | 41T0504 | FGAF40N60UFTU | 38463330 |
| Product Name | IGBTs - Single - FGAF40N60UFTU | Through-Hole 600V 40A IGBT Transistor | IGBTs | IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Igbt,n Channel,fast W/dio,600V,40A,to-3Pf; Continuous Collector Current Onsemi | IGBT Transistors | IGBT |
| VCE(on) | 3 volts | ||||||||
| PD | 100000 milliwatts | 100000 milliwatts | 100000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) |
