Manufacturer: ON Semiconductor
Win Source Part Number: 860699-AFGB40T65SQDN
Series: Automotive, AEC-Q101
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: IGBT - 650 V 80 A 238 W Surface Mount D²PAK-3 (TO-263-3)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: AFGB40
Categories: Discrete Semiconductor Products
Case / Package: D²PAK-3 (TO-263-3)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: AFGB40T65SQDNOSTR, AFGB40T65SQDNOSCT, AFGB40T65SQDNOSDKR
IGBT 650V 80A 238W Surface Mount D²PAK-3 (TO-263-3)
IGBT 650V 80A 238W Surface Mount D²PAK-3 (TO-263-3)
IGBT 650V 80A 238W Surface Mount D²PAK-3 (TO-263-3)
IGBT, 650V FS4 High speed version, for OBC application in D2pak 650V, 40A, D2PAK, 800-REEL Product overview: AFGB40T65SQDN from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 40A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 40A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-AFGB40T65SQDN can be used for catalog matching and distributor lookup.
650V/40A FS4 IGBT TO263 A
IGBT, 650V, 80A, 238W, TO-263; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:238W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT Transistors 650V/40A FS4 IGBT
650V/40A FS4 IGBT TO263 A
| Win Source Electronics | DigiKey | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 860699-AFGB40T65SQDN | AFGB40T65SQDNOSTR-ND | AFGB40T65SQDNOSCT-ND | 279-AFGB40T65SQDN | 1858642 | 1858642P | AFGB40T65SQDN | 84AC6503 | AFGB40T65SQDN | AFGB40T65SQDN |
| Product Name | IGBTs - Single - AFGB40T65SQDN | Single IGBTs | Single IGBTs | 650V 40A IGBT Transistor | IGBTs | IGBTs | Single IGBTs | Igbt, 650V, 80A, 238W, To-263; Dc Collector Current Onsemi | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-263; SOT3; D²PAK-3 (TO-263-3) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2pak | TO-263; TO-263 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3; TO-263 | Automotive | ||
| Features | IGBT - 650 V 80 A 238 W Surface Mount D²PAK-3 (TO-263-3) | |||||||||
| Packing Method | Tape Reel | Cut Tape (CT) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
