Manufacturer: ON Semiconductor
Win Source Part Number: 860699-AFGB40T65SQDN
Series: Automotive, AEC-Q101
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: IGBT - 650 V 80 A 238 W Surface Mount D²PAK-3 (TO-263-3)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: AFGB40
Categories: Discrete Semiconductor Products
Case / Package: D²PAK-3 (TO-263-3)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: AFGB40T65SQDNOSTR, AFGB40T65SQDNOSCT, AFGB40T65SQDNOSDKR
650V/40A FS4 IGBT TO263 A
IGBT 650V 80A 238W Surface Mount D²PAK-3 (TO-263-3)
IGBT 650V 80A 238W Surface Mount D²PAK-3 (TO-263-3)
IGBT 650V 80A 238W Surface Mount D²PAK-3 (TO-263-3)
IGBT Transistors 650V/40A FS4 IGBT
650V/40A FS4 IGBT TO263 A
IGBT, 650V, 80A, 238W, TO-263; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:238W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263; No. of Pins:3Pins; RoHS Compliant: Yes
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 860699-AFGB40T65SQDN | 1858642 | 1858642P | AFGB40T65SQDN | AFGB40T65SQDNOSTR-ND | AFGB40T65SQDNOSCT-ND | AFGB40T65SQDN | AFGB40T65SQDN | 84AC6503 |
| Product Name | IGBTs - Single - AFGB40T65SQDN | IGBTs | IGBTs | Single IGBTs | Single IGBTs | Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, 650V, 80A, 238W, To-263; Dc Collector Current Onsemi |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-263; SOT3; D²PAK-3 (TO-263-3) | D2pak | TO-263; TO-263 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Automotive | TO-3; TO-263 | |
| Features | IGBT - 650 V 80 A 238 W Surface Mount D²PAK-3 (TO-263-3) | ||||||||
| Polarity | N-Channel |
