The Win Source Electronics IGBT is a 1200 V, 40 A Insulated Gate Bipolar Transistor designed for high-performance switching applications. It features an Ultra Field Stop Trench construction that enhances efficiency by providing low on-state voltage and minimal switching losses. The device is optimized for applications such as solar inverters, uninterruptible power supplies (UPS), and industrial switching. Key specifications include a maximum junction temperature of 175¬8C, a collector-emitter saturation voltage (VCE(Sat)) of 1.55 V at 40 A, and a maximum power dissipation of 306 W at 25¬8C. The IGBT also incorporates a fast and soft co-packaged free-wheeling diode, which contributes to its suitability for motor driver applications. The device has a thermal resistance of 0.49 ¬8C/W from junction to case and operates effectively within a temperature range of -55¬8C to +175¬8C. Engineers may find this IGBT advantageous for projects requiring robust performance in demanding environments, particularly where efficiency and thermal management are critical.
Alternative Parts (Cross-Reference): Cross
Manufacturer: onsemi
Category: Discrete Semiconductor Products Transistors IGBTs Single IGBTs
Package: Tube
Product Status: Active
IGBT Type: Trench Field Stop
Power - Max: 306 W
Switching Energy: 1.04mJ (on), 1.35mJ (off)
Input Type: Standard
Gate Charge: 227 nC
1200V 40A FSIII IGBT LOW VCESAT Product overview: FGH4L40T120LQD from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 40A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 40A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH4L40T120LQD can be used for catalog matching and distributor lookup.
1200V 40A FSIII IGBT LOW VCESAT
TRANSISTOR, IGBT, 1.2KV, 80A, TO-247 ROHS COMPLIANT: YES
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-FGH4L40T120LQD | 488-FGH4L40T120LQD-ND | FGH4L40T120LQD | 28AK9650 | |
| Product Name | Discrete Semiconductor Products Transistors IGBTs Single IGBTs | 1200V 40A IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Transistor, Igbt, 1.2Kv, 80A, To-247 Rohs Compliant Onsemi |
| Package Type | SOT3 | Tube | TO-247; TO-247-4 | TO-3; TO-247 |
