onsemi Single IGBTs FGB7N60UNDF

Description
IGBT NPT 600V 14A 83W Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
IGBT NPT 600V 14A 83W Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - FGB7N60UNDF-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGB7N60UNDF-ND
Single IGBTs FGB7N60UNDF-ND
IGBT NPT 600V 14A 83W Surface Mount D²PAK (TO-263)

IGBT NPT 600V 14A 83W Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Singapore
600V 7A IGBT Transistor
279-FGB7N60UNDF
600V 7A IGBT Transistor 279-FGB7N60UNDF
IGBT, 600V, 7A, Short Circuit Rated, 800-REEL Product overview: FGB7N60UNDF from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 7A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 7A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGB7N60UNDF can be used for catalog matching and distributor lookup.

IGBT, 600V, 7A, Short Circuit Rated, 800-REEL Product overview: FGB7N60UNDF from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 7A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 7A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGB7N60UNDF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - FGB7N60UNDF - 1174173-FGB7N60UNDF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGB7N60UNDF
1174173-FGB7N60UNDF
IGBTs - Single - FGB7N60UNDF 1174173-FGB7N60UNDF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1174173-FGB7N60UNDF Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Power - Max: 83W Reverse Recovery Time (trr): 32.3ns IGBT Type: NPT Current - Collector Pulsed (Icm): 21A Switching Energy: 99μJ (on), 104μJ (off) Input Type: Standard Gate Charge: 18nC Td (on/off) @ 25°C: 5.9ns/32.3ns Test Condition: 400V, 7A, 10 Ohm, 15V Family Name: FGB7N60UNDF Categories: Discrete Semiconductor Products Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-263AB (D2PAK) Current - Collector (Ic) (Maximum): 14A Voltage - Collector Emitter Breakdown (Maximum): 600V Vce(on) (Maximum) @ Vge, Ic: 2.3V @ 15V, 7A Alternative Parts (Cross-Reference): STGB8NC60KD; STGB6NC60HD; STGB10NC60HD; Introduction Date: December 08, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2023 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1174173-FGB7N60UNDF
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Power - Max: 83W
Reverse Recovery Time (trr): 32.3ns
IGBT Type: NPT
Current - Collector Pulsed (Icm): 21A
Switching Energy: 99μJ (on), 104μJ (off)
Input Type: Standard
Gate Charge: 18nC
Td (on/off) @ 25°C: 5.9ns/32.3ns
Test Condition: 400V, 7A, 10 Ohm, 15V
Family Name: FGB7N60UNDF
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-263AB (D2PAK)
Current - Collector (Ic) (Maximum): 14A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 2.3V @ 15V, 7A
Alternative Parts (Cross-Reference): STGB8NC60KD; STGB6NC60HD; STGB10NC60HD;
Introduction Date: December 08, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGB7N60UNDF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGB7N60UNDF
Discrete Semiconductor Products - Transistors - IGBTs FGB7N60UNDF
IGBT NPT 600V 14A D2PAK

IGBT NPT 600V 14A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
FGB7N60UNDF
IGBT Transistors FGB7N60UNDF
IGBT Transistors 600V 7A NPT IGBT

IGBT Transistors 600V 7A NPT IGBT

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGB7N60UNDF-ND 279-FGB7N60UNDF 1174173-FGB7N60UNDF FGB7N60UNDF FGB7N60UNDF
Product Name Single IGBTs 600V 7A IGBT Transistor IGBTs - Single - FGB7N60UNDF Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3
Packing Method Tube Tube; Tube Tube; Tube
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