onsemi Single IGBTs AFGH4L40T120RWD-STD

The AFGH4L40T120RWD-STD is a 1200 V, 40 A N-channel IGBT with integrated diode in a TO-247-4L package, designed for automotive applications. It uses field stop VII technology with a typical collector-emitter saturation voltage of 1.67 V at 25°C and 2.12 V at 175°C, and a maximum junction temperature of 175°C. The device is AEC-Q101 qualified and RoHS compliant, with a 6 µs short circuit withstand time. Thermal resistance from junction to case is 0.36 °C/W for the IGBT and 0.66 °C/W for the diode. Input capacitance is 3054 pF, output capacitance 126 pF, and reverse transfer capacitance 15.4 pF at 30 V and 1 MHz. Total gate charge is 112 nC at 600 V and 15 V gate drive. Turn-off switching loss is 0.99 mJ at 40 A and 25°C.