onsemi Single IGBTs FGA50S110P

Description
IGBT Trench Field Stop 1100V 50A 300W Through Hole TO-3PN
Request a Quote Datasheet
Description
IGBT Trench Field Stop 1100V 50A 300W Through Hole TO-3PN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - FGA50S110P-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGA50S110P-ND
Single IGBTs FGA50S110P-ND
IGBT Trench Field Stop 1100V 50A 300W Through Hole TO-3PN

IGBT Trench Field Stop 1100V 50A 300W Through Hole TO-3PN

Buy Now Datasheet
IGBTs - Single - FGA50S110P - 1174164-FGA50S110P - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGA50S110P
1174164-FGA50S110P
IGBTs - Single - FGA50S110P 1174164-FGA50S110P
Manufacturer: ON Semiconductor Win Source Part Number: 1174164-FGA50S110P Packaging: Tube Mounting Style: Through Hole IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 120A Input Type: Standard Gate Charge: 195nC Categories: Discrete Semiconductor Products Supplier Device Package: TO-3PN Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P-3, SC-65-3 Current - Collector (Ic) (Maximum): 50A Voltage - Collector Emitter Breakdown (Maximum): 1100V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 450 MSL Level: 1 (Unlimited) Maximum Power: 300W Vce(on) (Maximum) at Vge, Ic: 2.6V at 15V, 50A

Manufacturer: ON Semiconductor
Win Source Part Number: 1174164-FGA50S110P
Packaging: Tube
Mounting Style: Through Hole
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 120A
Input Type: Standard
Gate Charge: 195nC
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-3PN
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-3P-3, SC-65-3
Current - Collector (Ic) (Maximum): 50A
Voltage - Collector Emitter Breakdown (Maximum): 1100V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 450
MSL Level: 1 (Unlimited)
Maximum Power: 300W
Vce(on) (Maximum) at Vge, Ic: 2.6V at 15V, 50A

Buy Now
Singapore, Singapore
1100V 50A IGBT Transistor
279-FGA50S110P
1100V 50A IGBT Transistor 279-FGA50S110P
IGBT, 1100V, 50A, Shorted-anode, 450-TUBE Product overview: FGA50S110P from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1100V, 50A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1100V, 50A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA50S110P can be used for catalog matching and distributor lookup.

IGBT, 1100V, 50A, Shorted-anode, 450-TUBE Product overview: FGA50S110P from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1100V, 50A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1100V, 50A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA50S110P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
FGA50S110P
IGBT Transistors FGA50S110P
IGBT Transistors 1100 V, 50 A Shorted-anode IGBT

IGBT Transistors 1100 V, 50 A Shorted-anode IGBT

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGA50S110P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGA50S110P
Discrete Semiconductor Products - Transistors - IGBTs FGA50S110P
IGBT TRENCH/FS 1100V 50A TO3PN

IGBT TRENCH/FS 1100V 50A TO3PN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGA50S110P-ND 1174164-FGA50S110P 279-FGA50S110P FGA50S110P FGA50S110P
Product Name Single IGBTs IGBTs - Single - FGA50S110P 1100V 50A IGBT Transistor IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 C (-67 F)
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3
Packing Method Tube Tube; Tube Tube; Tube
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