Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001167-FGD2N40L
Packaging: Reel - TR
Mounting: SMD (SMT)
Input Type: Logic
Gate Charge: 11nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: D-Pak
Maximum Current Collector: 7A
VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
Maximum Power Dissipation: 29W
Pulsed Collector Current: 29A
Collector-emitter saturation voltage(Max): 1.6V @ 2.4V, 2.5A
Turn-on and Turn-off delay time: 47ns/650ns
Testing Conditions: 300V, 2.5A, 51 Ohm, 4V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
IGBT 400V 7A 29W Surface Mount TO-252AA
N-CHANNEL IGBT Product overview: FGD2N40L from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGD2N40L can be used for catalog matching and distributor lookup.
IGBT 400V 7A 29W DPAK
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 001167-FGD2N40L | FGD2N40LTR-ND | 279-FGD2N40L | 598-FGD2N40L | FGD2N40L |
| Product Name | IGBTs - Single - FGD2N40L | Single IGBTs | N-Channel IGBT Transistor | IGBT 400V 7A 29W DPAK | Discrete Semiconductor Products - Transistors - IGBTs |
| VCE(on) | 1.6 volts | ||||
| PD | 29000 milliwatts | 29000 milliwatts | |||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |