onsemi Single IGBTs FGH40T100SMD

Description
IGBT 1000V 80A 333W TO247-3
Request a Quote Datasheet
Description
IGBT 1000V 80A 333W TO247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - FGH40T100SMD - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
FGH40T100SMD
Single IGBTs FGH40T100SMD
IGBT 1000V 80A 333W TO247-3

IGBT 1000V 80A 333W TO247-3

Supplier's Site Datasheet
Single IGBTs - FGH40T100SMD-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGH40T100SMD-ND
Single IGBTs FGH40T100SMD-ND
IGBT Trench Field Stop 1000V 80A 333W Through Hole TO-247-3

IGBT Trench Field Stop 1000V 80A 333W Through Hole TO-247-3

Buy Now Datasheet
IGBTs - Single - FGH40T100SMD - 001173-FGH40T100SMD - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGH40T100SMD
001173-FGH40T100SMD
IGBTs - Single - FGH40T100SMD 001173-FGH40T100SMD
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001173-FGH40T100SMD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 78ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 265nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247-3 Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V Maximum Power Dissipation: 333W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.3V @ 15V, 40A Total Switching Energy(Ets): 2.35mJ (on), 1.15mJ (off) Turn-on and Turn-off delay time: 29ns/285ns Testing Conditions: 600V, 40A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001173-FGH40T100SMD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 78ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 265nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247-3
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V
Maximum Power Dissipation: 333W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 40A
Total Switching Energy(Ets): 2.35mJ (on), 1.15mJ (off)
Turn-on and Turn-off delay time: 29ns/285ns
Testing Conditions: 600V, 40A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 450

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGH40T100SMD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGH40T100SMD
Discrete Semiconductor Products - Transistors - IGBTs FGH40T100SMD
IGBT 1000V 80A 333W TO247-3

IGBT 1000V 80A 333W TO247-3

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
FGH40T100SMD
IGBT Transistors FGH40T100SMD
IGBT Transistors 1000V 40A Field Stop Trench IGBT

IGBT Transistors 1000V 40A Field Stop Trench IGBT

Buy Now Datasheet
Igbt, 1Kv, 80A, 175Deg C, 333W Rohs Compliant Onsemi - 54AH8700 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, 1Kv, 80A, 175Deg C, 333W Rohs Compliant Onsemi
54AH8700
Igbt, 1Kv, 80A, 175Deg C, 333W Rohs Compliant Onsemi 54AH8700
IGBT, 1KV, 80A, 175DEG C, 333W ROHS COMPLIANT: YES

IGBT, 1KV, 80A, 175DEG C, 333W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGH40T100SMD FGH40T100SMD-ND 001173-FGH40T100SMD FGH40T100SMD FGH40T100SMD 54AH8700
Product Name Single IGBTs Single IGBTs IGBTs - Single - FGH40T100SMD Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors Igbt, 1Kv, 80A, 175Deg C, 333W Rohs Compliant Onsemi
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3; TO-247-3 TO-3
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube
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