Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001173-FGH40T100SMD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 78ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 265nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247-3
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V
Maximum Power Dissipation: 333W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 40A
Total Switching Energy(Ets): 2.35mJ (on), 1.15mJ (off)
Turn-on and Turn-off delay time: 29ns/285ns
Testing Conditions: 600V, 40A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 450
IGBT 1000V 80A 333W TO247-3
IGBT Trench Field Stop 1000V 80A 333W Through Hole TO-247-3
IGBT, 1000V, 40A, Field Stop Trench, 450-TUBE Product overview: FGH40T100SMD from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 40A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1000V, 40A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH40T100SMD can be used for catalog matching and distributor lookup.
IGBT 1000V 80A 333W TO247-3
IGBT, 1KV, 80A, 175DEG C, 333W ROHS COMPLIANT: YES
IGBT Transistors 1000V 40A Field Stop Trench IGBT
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 001173-FGH40T100SMD | FGH40T100SMD | FGH40T100SMD-ND | 279-FGH40T100SMD | FGH40T100SMD | 54AH8700 | FGH40T100SMD |
| Product Name | IGBTs - Single - FGH40T100SMD | Single IGBTs | Single IGBTs | 1000V 40A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, 1Kv, 80A, 175Deg C, 333W Rohs Compliant Onsemi | IGBT Transistors |
| VCE(on) | 2.3 volts | ||||||
| PD | 333000 milliwatts | 333000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |
