IGBT 1200V 41A 250W TO247
IGBT 1200V 41A 250W TO247 Product overview: APT13GP120BDQ1G from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 41A, 250W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 41A, 250W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT13GP120BDQ1G can be used for catalog matching and distributor lookup.
Manufacturer: Microchip Technology
Win Source Part Number: 911625-APT13GP120BDQ
Series: POWER MOS 7®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: IGBT PT 1200 V 41 A 250 W Through Hole TO-247 [B]
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: APT13GP120
Categories: Discrete Semiconductor Products
Case / Package: TO-247 [B]
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Balance
Quantity per package: 1
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 35 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: APT13GP120BDQ1GMI, APT13GP120BDQ1GMI-ND
IGBT PT 1200V 41A 250W Through Hole TO-247 [B]
The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switch mode power supplies.
IGBT 1200V 41A 250W TO247
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT13GP120BDQ1G | 279-APT13GP120BDQ1G | 911625-APT13GP120BDQ1G | APT13GP120BDQ1G-ND | APT13GP120BDQ1G | APT13GP120BDQ1G |
| Product Name | Single IGBTs | 1200V 41A 250W IGBT Transistor | IGBTs - Single - APT13GP120BDQ1G | Single IGBTs | Power IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | TO-247; TO-247-3 | Tube | TO-247; SOT3; TO-247 [B] | TO-247; TO-247-3 | TO-247; TO-247 | |
| PD | 250 milliwatts |