Microchip Technology, Inc. Single IGBTs APT13GP120BDQ1G

Description
IGBT 1200V 41A 250W TO247
Request a Quote Datasheet
Description
IGBT 1200V 41A 250W TO247
Request a Quote Datasheet

Suppliers

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Product
Description
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Single IGBTs APT13GP120BDQ1G
IGBT 1200V 41A 250W TO247

IGBT 1200V 41A 250W TO247

Supplier's Site Datasheet
Singapore
1200V 41A 250W IGBT Transistor
279-APT13GP120BDQ1G
1200V 41A 250W IGBT Transistor 279-APT13GP120BDQ1G
IGBT 1200V 41A 250W TO247 Product overview: APT13GP120BDQ1G from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 41A, 250W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 41A, 250W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT13GP120BDQ1G can be used for catalog matching and distributor lookup.

IGBT 1200V 41A 250W TO247 Product overview: APT13GP120BDQ1G from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 41A, 250W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 41A, 250W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT13GP120BDQ1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - APT13GP120BDQ1G - 911625-APT13GP120BDQ1G - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - APT13GP120BDQ1G
911625-APT13GP120BDQ1G
IGBTs - Single - APT13GP120BDQ1G 911625-APT13GP120BDQ1G
Manufacturer: Microchip Technology Win Source Part Number: 911625-APT13GP120BDQ 1G Series: POWER MOS 7® Operating Temperature Range: -55°C ~ 150°C (TJ) Features: IGBT PT 1200 V 41 A 250 W Through Hole TO-247 [B] Package: TO-247-3 Package: Tube Mounting: Through Hole Family Name: APT13GP120 Categories: Discrete Semiconductor Products Case / Package: TO-247 [B] ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 85 pct. Supply and Demand Status: Balance Quantity per package: 1 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 35 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: APT13GP120BDQ1GMI, APT13GP120BDQ1GMI-ND

Manufacturer: Microchip Technology
Win Source Part Number: 911625-APT13GP120BDQ1G
Series: POWER MOS 7®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: IGBT PT 1200 V 41 A 250 W Through Hole TO-247 [B]
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: APT13GP120
Categories: Discrete Semiconductor Products
Case / Package: TO-247 [B]
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Balance
Quantity per package: 1
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 35 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: APT13GP120BDQ1GMI, APT13GP120BDQ1GMI-ND

Buy Now Datasheet
Single IGBTs - APT13GP120BDQ1G-ND - DigiKey
Thief River Falls, MN, United States
IGBT PT 1200V 41A 250W Through Hole TO-247 [B]

IGBT PT 1200V 41A 250W Through Hole TO-247 [B]

Buy Now Datasheet
Power IGBT Transistor - APT13GP120BDQ1G - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APT13GP120BDQ1G
Power IGBT Transistor APT13GP120BDQ1G
The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switch mode power supplies.

The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switch mode power supplies.

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - APT13GP120BDQ1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
APT13GP120BDQ1G
Discrete Semiconductor Products - Transistors - IGBTs APT13GP120BDQ1G
IGBT 1200V 41A 250W TO247

IGBT 1200V 41A 250W TO247

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number APT13GP120BDQ1G 279-APT13GP120BDQ1G 911625-APT13GP120BDQ1G APT13GP120BDQ1G-ND APT13GP120BDQ1G APT13GP120BDQ1G
Product Name Single IGBTs 1200V 41A 250W IGBT Transistor IGBTs - Single - APT13GP120BDQ1G Single IGBTs Power IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; TO-247-3 Tube TO-247; SOT3; TO-247 [B] TO-247; TO-247-3 TO-247; TO-247
PD 250 milliwatts
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