Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.
IGBT NPT, Trench Field Stop 1200V 134A 543W Through Hole
IGBT 1200V 134A 543W TO-247
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT50GN120B2G | APT50GN120B2G-ND | APT50GN120B2G |
| Product Name | Power IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs |
| Package Type | T-Max™ | TO-247; TO-247-3 Variant |
