Manufacturer: ON Semiconductor
Win Source Part Number: 871762-FGH50T65UPD
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: IGBT Trench Field Stop Through Hole TO-247-3
Package: Tube
Package: TO-247-3
Mounting: Through Hole
Part Status: Not For New Designs
Family Name: FGH50
Categories: Discrete Semiconductor Products
Case / Package: TO-247-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Limited
Quantity per package: 450
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
IGBTs 650 V 100 A 240 W Product overview: FGH50T65UPD from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 100 A, 240 W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 100 A, 240 W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH50T65UPD can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 100A 340W Through Hole TO-247-3
IGBT TRENCH/FS 650V 100A TO247-3
IGBT Transistors 650 V 100 A 240 W
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 871762-FGH50T65UPD | 279-FGH50T65UPD | FGH50T65UPD-ND | FGH50T65UPD | FGH50T65UPD |
| Product Name | IGBTs - Single - FGH50T65UPD | 650 V 100 A 240 W IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-247; SOT3; TO-247-3 | Tube | TO-247; TO-247-3 | ||
| Features | IGBT Trench Field Stop Through Hole TO-247-3 |
