IGBT Trench Field Stop 1200V 245A 960W Through Hole
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
IGBT 1200V 245A 960W TMAX
IGBT, 1.2KV, 245A, THT; Continuous Collector Current:245A; Collector Emitter Saturation Voltage:-; Power Dissipation:960W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- RoHS Compliant: Yes
IGBT, 1.2KV, 245A, THT ROHS COMPLIANT: YES
| DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT100GN120B2G-ND | APT100GN120B2G | APT100GN120B2G | 78AH5530 | 28AK5581 |
| Product Name | Single IGBTs | Power IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, 1.2Kv, 245A, Tht; Continuous Collector Current Microchip | Igbt, 1.2Kv, 245A, Tht Rohs Compliant Microchip |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) |
