Microchip Technology, Inc. Power IGBT Transistor APT54GA60BD30

Power MOS 8^® is a high speed Punch-Through switch-mode IGBT. Low E_off is achieved through leading technology silicon design and lifetime control processes. A reduced E_off - V_CE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of C_res/C_ies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.

IGBT PT 600V 96A 416W Through Hole TO-247 [B]

IGBT 600V 96A 416W TO247 Product overview: APT54GA60BD30 from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 96A, 416W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 96A, 416W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT54GA60BD30 can be used for catalog matching and distributor lookup.