IGBT, 650V, 40A, 1.8V, TO-247 Low VCE(ON) Field Stop, 450-TUBE Product overview: FGH40N65UFDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 40A, 1.8V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 40A, 1.8V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH40N65UFDTU can be used for catalog matching and distributor lookup.
IGBT FIELD STOP 650V 80A TO247-3
IGBT Field Stop 650V 80A 290W Through Hole TO-247-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 087687-FGH40N65UFDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 45ns
IGBT Type: Field Stop
Input Type: Standard
Gate Charge: 120nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 290W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 40A
Total Switching Energy(Ets): 1.19mJ (on), 460μJ (off)
Turn-on and Turn-off delay time: 24ns/112ns
Testing Conditions: 400V, 40A, 10 Ohm, 15V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
IGBT FIELD STOP 650V 80A TO247-3
IGBT Transistors N-ch / 40A 650V
IGBT 650V 80A 290W TO247
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-FGH40N65UFDTU | FGH40N65UFDTU | FGH40N65UFDTU-ND | 087687-FGH40N65UFDTU | FGH40N65UFDTU | FGH40N65UFDTU | 598-FGH40N65UFDTU |
| Product Name | 650V 40A 1.8V IGBT Transistor | Single IGBTs | Single IGBTs | IGBTs - Single - FGH40N65UFDTU | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | IGBT 650V 80A 290W TO247 |
| PD | 290000 milliwatts | 290000 milliwatts | 290000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3; TO-247 | ||||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube | Tube; Tube | |||
| Structure | Field Stop |
