IGBT 650V 5A TO252 Product overview: AOD5B65M1 from Alpha and Omega Semiconductor, Inc. is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 5A, TO252. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 5A, TO252. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-AOD5B65M1 can be used for catalog matching and distributor lookup.
Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1016936-AOD5B65M1
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 195ns
Input Type: Standard
Gate Charge: 14nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252
Maximum Current Collector: 10A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 69W
Pulsed Collector Current: 15A
Collector-emitter saturation voltage(Max): 1.98V @ 15V, 5A
Total Switching Energy(Ets): 80μJ (on), 70μJ (off)
Turn-on and Turn-off delay time: 8.5ns/106ns
Testing Conditions: 400V, 5A, 60 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Balance
IGBT 650V 10A 69W Surface Mount TO-252 (DPAK)
IGBT 650V 10A 69W Surface Mount TO-252 (DPAK)
IGBT 650V 10A 69W Surface Mount TO-252 (DPAK)
IGBT 650V 5A TO252
69W 10A 650V TO-252-2(DPAK) IGBTs ROHS
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-AOD5B65M1 | 1016936-AOD5B65M1 | 785-1737-6-ND | 785-1737-1-ND | AOD5B65M1 | AOD5B65M1 | AOD5B65M1 |
| Product Name | 650V 5A TO252 IGBT Transistor | IGBTs - Single - AOD5B65M1 | Single IGBTs | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Triode/MOS Tube/Transistor >> IGBTs |
| PD | 69 milliwatts | 69000 milliwatts | 69000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | Tape & Reel (TR) | SOT3; TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK) |
