IGBT PT MOS 7 SIC COMBI 1200 V 2
1200 V, 19 A at 100 kHz Power MOS 7 punch-through (PT) IGBT with co-packaged anti-parallel SiC diode, TO-247
Features
| DigiKey | Richardson RFPD | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors |
| Product Number | 150-APT25GP120BSC15-ND | APT25GP120BSC15 |
| Product Name | Single IGBTs | Silicon Carbide/Silicon Hybrid Modules |
| TJ | -55 to 150 C (-67 to 302 F) |