Microchip Technology, Inc. Single IGBTs APT25GP120BSC15

Description
IGBT PT MOS 7 SIC COMBI 1200 V 2
  • Single IGBTs - 150-APT25GP120BSC15-ND - DigiKey
    DigiKey
  • Silicon Carbide/Silicon Hybrid Modules - APT25GP120BSC15 - Richardson RFPD
    Richardson RFPD
Request a Quote Datasheet
Description
IGBT PT MOS 7 SIC COMBI 1200 V 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 150-APT25GP120BSC15-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
150-APT25GP120BSC15-ND
Single IGBTs 150-APT25GP120BSC15-ND
IGBT PT MOS 7 SIC COMBI 1200 V 2

IGBT PT MOS 7 SIC COMBI 1200 V 2

Buy Now Datasheet
Silicon Carbide/Silicon Hybrid Modules - APT25GP120BSC15 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide/Silicon Hybrid Modules
APT25GP120BSC15
Silicon Carbide/Silicon Hybrid Modules APT25GP120BSC15
1200 V, 19 A at 100 kHz Power MOS 7 punch-through (PT) IGBT with co-packaged anti-parallel SiC diode, TO-247 Features Low conduction loss and saturation voltage Low gate charge Ultrafast tail current shutoff No reverse recovery High operating frequency Reverse-bias safe operating area (RBSOA) rated RoHS compliant Zero Eon switching loss from co-packaged, anti-parallel diode

1200 V, 19 A at 100 kHz Power MOS 7 punch-through (PT) IGBT with co-packaged anti-parallel SiC diode, TO-247

Features

  • Low conduction loss and saturation voltage
  • Low gate charge
  • Ultrafast tail current shutoff
  • No reverse recovery
  • High operating frequency
  • Reverse-bias safe operating area (RBSOA) rated
  • RoHS compliant
  • Zero Eon switching loss from co-packaged, anti-parallel diode
Supplier's Site Datasheet

Technical Specifications

  DigiKey Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT) Transistors
Product Number 150-APT25GP120BSC15-ND APT25GP120BSC15
Product Name Single IGBTs Silicon Carbide/Silicon Hybrid Modules
TJ -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data