IGBT Trench Field Stop 650V 100A 319W Through Hole TO-3PN
Manufacturer: ON Semiconductor
Win Source Part Number: 813624-FGA50T65SHD
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 319W
Reverse Recovery Time (trr): 34.6ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 150A
Switching Energy: 1.28mJ (on), 384μJ (off)
Input Type: Standard
Gate Charge: 87nC
Test Condition: 400V, 50A, 6Ohm, 15V
Supplier Device Package: TO-3PN
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-3P-3, SC-65-3
Current - Collector (Ic) (Maximum): 100A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Popularity: Low
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 450
MSL Level: 1 (Unlimited)
Vce(on) (Maximum) at Vge, Ic: 2.1V at 15V, 50A
Td (on/off) at 25°C: 22.4ns/73.6ns
IGBT TRENCH/FS 650V 100A TO3PN
IGBT TRENCH/FS 650V 100A TO3PN
IGBT Transistors FS3TIGBT TO3PN 50A 650V
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FGA50T65SHD-ND | 813624-FGA50T65SHD | FGA50T65SHD | FGA50T65SHD | FGA50T65SHD |
| Product Name | Single IGBTs | IGBTs - Single - FGA50T65SHD | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
