onsemi IGBTs - Single - FGA50T65SHD FGA50T65SHD

Manufacturer: ON Semiconductor
Win Source Part Number: 813624-FGA50T65SHD
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 319W
Reverse Recovery Time (trr): 34.6ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 150A
Switching Energy: 1.28mJ (on), 384μJ (off)
Input Type: Standard
Gate Charge: 87nC
Test Condition: 400V, 50A, 6Ohm, 15V
Supplier Device Package: TO-3PN
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-3P-3, SC-65-3
Current - Collector (Ic) (Maximum): 100A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Popularity: Low
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 450
MSL Level: 1 (Unlimited)
Vce(on) (Maximum) at Vge, Ic: 2.1V at 15V, 50A
Td (on/off) at 25°C: 22.4ns/73.6ns

IGBT TRENCH/FS 650V 100A TO3PN

IGBT, 650 V, 50 A Field Stop Trench, 450-TUBE Product overview: FGA50T65SHD from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 50 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 50 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA50T65SHD can be used for catalog matching and distributor lookup.

IGBT Trench Field Stop 650V 100A 319W Through Hole TO-3PN