onsemi IGBTs - Single - FGH30N6S2D FGH30N6S2D

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038665-FGH30N6S2D Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 46ns Input Type: Standard Gate Charge: 23nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Maximum Current Collector: 45A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 167W Pulsed Collector Current: 108A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 12A Total Switching Energy(Ets): 55μJ (on), 100μJ (off) Turn-on and Turn-off delay time: 6ns/40ns Testing Conditions: 390V, 12A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038665-FGH30N6S2D Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 46ns Input Type: Standard Gate Charge: 23nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Maximum Current Collector: 45A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 167W Pulsed Collector Current: 108A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 12A Total Switching Energy(Ets): 55μJ (on), 100μJ (off) Turn-on and Turn-off delay time: 6ns/40ns Testing Conditions: 390V, 12A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - FGH30N6S2D - 1038665-FGH30N6S2D - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGH30N6S2D
1038665-FGH30N6S2D
IGBTs - Single - FGH30N6S2D 1038665-FGH30N6S2D
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038665-FGH30N6S2D Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 46ns Input Type: Standard Gate Charge: 23nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Maximum Current Collector: 45A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 167W Pulsed Collector Current: 108A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 12A Total Switching Energy(Ets): 55μJ (on), 100μJ (off) Turn-on and Turn-off delay time: 6ns/40ns Testing Conditions: 390V, 12A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038665-FGH30N6S2D
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 46ns
Input Type: Standard
Gate Charge: 23nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 45A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 167W
Pulsed Collector Current: 108A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 12A
Total Switching Energy(Ets): 55μJ (on), 100μJ (off)
Turn-on and Turn-off delay time: 6ns/40ns
Testing Conditions: 390V, 12A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
600V 45A 167W IGBT Transistor
279-FGH30N6S2D
600V 45A 167W IGBT Transistor 279-FGH30N6S2D
IGBT 600V 45A 167W TO247 Product overview: FGH30N6S2D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 45A, 167W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 45A, 167W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH30N6S2D can be used for catalog matching and distributor lookup.

IGBT 600V 45A 167W TO247 Product overview: FGH30N6S2D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 45A, 167W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 45A, 167W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH30N6S2D can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single IGBTs - FGH30N6S2D-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGH30N6S2D-ND
Single IGBTs FGH30N6S2D-ND
IGBT 600V 45A 167W Through Hole TO-247-3

IGBT 600V 45A 167W Through Hole TO-247-3

Buy Now Datasheet
IGBT 600V 45A 167W TO247 - 598-FGH30N6S2D - Utmel Electronic Limited
Hong Kong, China
IGBT 600V 45A 167W TO247
598-FGH30N6S2D
IGBT 600V 45A 167W TO247 598-FGH30N6S2D
IGBT 600V 45A 167W TO247

IGBT 600V 45A 167W TO247

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - FGH30N6S2D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGH30N6S2D
Discrete Semiconductor Products - Transistors - IGBTs FGH30N6S2D
IGBT 600V 45A 167W TO247

IGBT 600V 45A 167W TO247

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1038665-FGH30N6S2D 279-FGH30N6S2D FGH30N6S2D-ND 598-FGH30N6S2D FGH30N6S2D
Product Name IGBTs - Single - FGH30N6S2D 600V 45A 167W IGBT Transistor Single IGBTs IGBT 600V 45A 167W TO247 Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2.5 volts 2.5 volts
PD 167000 milliwatts 167000 milliwatts 167000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247 TO-247; TO-247-3
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