Microchip Technology, Inc. Single IGBTs APT30GP60BDQ1G

Description
IGBT PT 600V 100A 463W Through Hole TO-247 [B]
Request a Quote Datasheet
Description
IGBT PT 600V 100A 463W Through Hole TO-247 [B]
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - APT30GP60BDQ1G-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
APT30GP60BDQ1G-ND
Single IGBTs APT30GP60BDQ1G-ND
IGBT PT 600V 100A 463W Through Hole TO-247 [B]

IGBT PT 600V 100A 463W Through Hole TO-247 [B]

Buy Now Datasheet
Power IGBT Transistor - APT30GP60BDQ1G - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APT30GP60BDQ1G
Power IGBT Transistor APT30GP60BDQ1G
The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switch mode power supplies.

The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switch mode power supplies.

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - APT30GP60BDQ1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
APT30GP60BDQ1G
Discrete Semiconductor Products - Transistors - IGBTs APT30GP60BDQ1G
IGBT 600V 100A 463W TO247

IGBT 600V 100A 463W TO247

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number APT30GP60BDQ1G-ND APT30GP60BDQ1G APT30GP60BDQ1G
Product Name Single IGBTs Power IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F)
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