onsemi IGBTs - Single - FGA30S120P FGA30S120P

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038638-FGA30S120P Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 78nC Family Name: FGA30S120P Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 1300V Maximum Power Dissipation: 348W Pulsed Collector Current: 150A Collector-emitter saturation voltage(Max): 2.3V @ 15V, 30A Alternative Parts (Cross-Reference): STGWT28IH125DF; TSG25N120CN C0; STGWA25H120F2; RGS50TSX2HRC11; Introduction Date: January 05, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance Quantity per package: 450
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038638-FGA30S120P Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 78nC Family Name: FGA30S120P Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 1300V Maximum Power Dissipation: 348W Pulsed Collector Current: 150A Collector-emitter saturation voltage(Max): 2.3V @ 15V, 30A Alternative Parts (Cross-Reference): STGWT28IH125DF; TSG25N120CN C0; STGWA25H120F2; RGS50TSX2HRC11; Introduction Date: January 05, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance Quantity per package: 450
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Datasheet
Datasheet Summary
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The FGA30S120P is a single IGBT designed for high-speed switching applications, particularly suitable for induction heating and microwave ovens. It features a collector-emitter breakdown voltage of 1300 V and a maximum collector current of 60 A at a case temperature of 25¬8C. The device exhibits a low saturation voltage of 1.75 V at 30 A, which enhances its efficiency in power applications. With a maximum power dissipation of 348 W and a pulsed collector current capability of 150 A, the FGA30S120P is built to handle demanding operational conditions. It operates within a wide temperature range of -55¬8C to +175¬8C, making it versatile for various environments. The IGBT is housed in a TO-3PN package and is RoHS compliant, ensuring it meets environmental standards. Engineers considering this component should note its high input impedance and exceptional avalanche capability, which allow for parallel configurations in applications. The device is popular in the market, with a balanced supply and demand status, making it a reliable choice for projects requiring robust performance in power electronics.

Datasheet Summary
Powered by GS/AI

The FGA30S120P is a single IGBT designed for high-speed switching applications, particularly suitable for induction heating and microwave ovens. It features a collector-emitter breakdown voltage of 1300 V and a maximum collector current of 60 A at a case temperature of 25¬8C. The device exhibits a low saturation voltage of 1.75 V at 30 A, which enhances its efficiency in power applications. With a maximum power dissipation of 348 W and a pulsed collector current capability of 150 A, the FGA30S120P is built to handle demanding operational conditions. It operates within a wide temperature range of -55¬8C to +175¬8C, making it versatile for various environments. The IGBT is housed in a TO-3PN package and is RoHS compliant, ensuring it meets environmental standards. Engineers considering this component should note its high input impedance and exceptional avalanche capability, which allow for parallel configurations in applications. The device is popular in the market, with a balanced supply and demand status, making it a reliable choice for projects requiring robust performance in power electronics.

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - FGA30S120P - 1038638-FGA30S120P - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGA30S120P
1038638-FGA30S120P
IGBTs - Single - FGA30S120P 1038638-FGA30S120P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038638-FGA30S120P Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 78nC Family Name: FGA30S120P Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 1300V Maximum Power Dissipation: 348W Pulsed Collector Current: 150A Collector-emitter saturation voltage(Max): 2.3V @ 15V, 30A Alternative Parts (Cross-Reference): STGWT28IH125DF; TSG25N120CN C0; STGWA25H120F2; RGS50TSX2HRC11; Introduction Date: January 05, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038638-FGA30S120P
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 78nC
Family Name: FGA30S120P
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1300V
Maximum Power Dissipation: 348W
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 30A
Alternative Parts (Cross-Reference): STGWT28IH125DF; TSG25N120CN C0; STGWA25H120F2; RGS50TSX2HRC11;
Introduction Date: January 05, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Quantity per package: 450

Buy Now Datasheet
Single IGBTs - FGA30S120P-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGA30S120P-ND
Single IGBTs FGA30S120P-ND
IGBT Trench Field Stop 1300V 60A 348W Through Hole TO-3PN

IGBT Trench Field Stop 1300V 60A 348W Through Hole TO-3PN

Buy Now Datasheet
Single IGBTs - FGA30S120P - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
FGA30S120P
Single IGBTs FGA30S120P
INSULATED GATE BIPOLAR TRANSISTO

INSULATED GATE BIPOLAR TRANSISTO

Supplier's Site Datasheet
IGBT Transistor 279-FGA30S120P
IGBTs Shorted AnodeTM IGBT Product overview: FGA30S120P from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA30S120P can be used for catalog matching and distributor lookup.

IGBTs Shorted AnodeTM IGBT Product overview: FGA30S120P from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA30S120P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGA30S120P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGA30S120P
Discrete Semiconductor Products - Transistors - IGBTs FGA30S120P
IGBT TRENCH/FS 1300V 60A TO3PN

IGBT TRENCH/FS 1300V 60A TO3PN

Supplier's Site
Igbt, 1.3Kv, 60A, 175Deg C, 348W Rohs Compliant Onsemi - 54AH8691 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, 1.3Kv, 60A, 175Deg C, 348W Rohs Compliant Onsemi
54AH8691
Igbt, 1.3Kv, 60A, 175Deg C, 348W Rohs Compliant Onsemi 54AH8691
IGBT, 1.3KV, 60A, 175DEG C, 348W ROHS COMPLIANT: YES

IGBT, 1.3KV, 60A, 175DEG C, 348W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
FGA30S120P
IGBT Transistors FGA30S120P
IGBT Transistors Shorted AnodeTM IGBT

IGBT Transistors Shorted AnodeTM IGBT

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1038638-FGA30S120P FGA30S120P-ND FGA30S120P 279-FGA30S120P FGA30S120P 54AH8691 FGA30S120P
Product Name IGBTs - Single - FGA30S120P Single IGBTs Single IGBTs IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs Igbt, 1.3Kv, 60A, 175Deg C, 348W Rohs Compliant Onsemi IGBT Transistors
VCE(on) 2.3 volts
PD 348000 milliwatts 348 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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