onsemi IGBTs - Single - FGD3N60LSDTM FGD3N60LSDTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038654-FGD3N60LSDTM Packaging: Reel - TR Mounting: SMD (SMT) Reverse Recovery Time (trr): 234ns Input Type: Standard Gate Charge: 12.5nC Categories: Discrete Semiconductor Products Status: Active Case / Package: D-Pak Maximum Current Collector: 6A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 40W Pulsed Collector Current: 25A Collector-emitter saturation voltage(Max): 1.5V @ 10V, 3A Total Switching Energy(Ets): 250μJ (on), 1mJ (off) Turn-on and Turn-off delay time: 40ns/600ns Testing Conditions: 480V, 3A, 470 Ohm, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038654-FGD3N60LSDTM Packaging: Reel - TR Mounting: SMD (SMT) Reverse Recovery Time (trr): 234ns Input Type: Standard Gate Charge: 12.5nC Categories: Discrete Semiconductor Products Status: Active Case / Package: D-Pak Maximum Current Collector: 6A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 40W Pulsed Collector Current: 25A Collector-emitter saturation voltage(Max): 1.5V @ 10V, 3A Total Switching Energy(Ets): 250μJ (on), 1mJ (off) Turn-on and Turn-off delay time: 40ns/600ns Testing Conditions: 480V, 3A, 470 Ohm, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - FGD3N60LSDTM - 1038654-FGD3N60LSDTM - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGD3N60LSDTM
1038654-FGD3N60LSDTM
IGBTs - Single - FGD3N60LSDTM 1038654-FGD3N60LSDTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038654-FGD3N60LSDTM Packaging: Reel - TR Mounting: SMD (SMT) Reverse Recovery Time (trr): 234ns Input Type: Standard Gate Charge: 12.5nC Categories: Discrete Semiconductor Products Status: Active Case / Package: D-Pak Maximum Current Collector: 6A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 40W Pulsed Collector Current: 25A Collector-emitter saturation voltage(Max): 1.5V @ 10V, 3A Total Switching Energy(Ets): 250μJ (on), 1mJ (off) Turn-on and Turn-off delay time: 40ns/600ns Testing Conditions: 480V, 3A, 470 Ohm, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038654-FGD3N60LSDTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 234ns
Input Type: Standard
Gate Charge: 12.5nC
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: D-Pak
Maximum Current Collector: 6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 40W
Pulsed Collector Current: 25A
Collector-emitter saturation voltage(Max): 1.5V @ 10V, 3A
Total Switching Energy(Ets): 250μJ (on), 1mJ (off)
Turn-on and Turn-off delay time: 40ns/600ns
Testing Conditions: 480V, 3A, 470 Ohm, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single IGBTs - FGD3N60LSDTM - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
FGD3N60LSDTM
Single IGBTs FGD3N60LSDTM
IGBT 600V 6A 40W DPAK

IGBT 600V 6A 40W DPAK

Supplier's Site Datasheet
Single IGBTs - FGD3N60LSDTMTR-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGD3N60LSDTMTR-ND
Single IGBTs FGD3N60LSDTMTR-ND
IGBT 600V 6A 40W Surface Mount TO-252AA

IGBT 600V 6A 40W Surface Mount TO-252AA

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
FGD3N60LSDTM
IGBT Transistors FGD3N60LSDTM
IGBT Transistors 600V IGBT HID Application

IGBT Transistors 600V IGBT HID Application

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGD3N60LSDTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGD3N60LSDTM
Discrete Semiconductor Products - Transistors - IGBTs FGD3N60LSDTM
IGBT 600V 6A 40W DPAK

IGBT 600V 6A 40W DPAK

Supplier's Site
Igbt, 600V, 6A, 150Deg C, 40W Rohs Compliant Onsemi - 54AH8694 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, 600V, 6A, 150Deg C, 40W Rohs Compliant Onsemi
54AH8694
Igbt, 600V, 6A, 150Deg C, 40W Rohs Compliant Onsemi 54AH8694
IGBT, 600V, 6A, 150DEG C, 40W ROHS COMPLIANT: YES

IGBT, 600V, 6A, 150DEG C, 40W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1038654-FGD3N60LSDTM FGD3N60LSDTM FGD3N60LSDTMTR-ND FGD3N60LSDTM FGD3N60LSDTM 54AH8694
Product Name IGBTs - Single - FGD3N60LSDTM Single IGBTs Single IGBTs IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs Igbt, 600V, 6A, 150Deg C, 40W Rohs Compliant Onsemi
VCE(on) 1.5 volts
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